DescriptionThe 2SD1221 is a transistor,silicon npn triple diffused type(pct process). Features of the 2SD1221 are:(1)low collector saturation voltage;Vce(sat)=0.4V(typ.); (2)high power dissipation:pc=20W; (3)complementary to 2SB906. The absolute maximum ratings of the 2SD1221 can be summarized a...
2SD1221: DescriptionThe 2SD1221 is a transistor,silicon npn triple diffused type(pct process). Features of the 2SD1221 are:(1)low collector saturation voltage;Vce(sat)=0.4V(typ.); (2)high power dissipation:...
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The 2SD1221 is a transistor,silicon npn triple diffused type(pct process).
Features of the 2SD1221 are:(1)low collector saturation voltage;Vce(sat)=0.4V(typ.); (2)high power dissipation:pc=20W; (3)complementary to 2SB906.
The absolute maximum ratings of the 2SD1221 can be summarized as:(1)collector-base voltage:60V; (2)collector-emitter voltage:60V; (3)emitter-base voltage:7V; (4)collector current:3A; (5)base current:0.5A; (6)collector power dissipation:Ta=25(1.0W);Tc=25(20W); (7)junction temperature:150; (8)storage temperature range:-55~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.