DescriptionThe 2SD1210 is a npn silicon epitaxial darlington transistor. Features of the 2SD1210 are:(1)high dc current gain; (2)low collector saturation voltage. The absolute maximum ratings of the 2SD1210 can be summarized as:(1)Vcbo:150V; (2)Vceo:100V; (3)Vebo:8.0V; (4)Ic(dc):+-10A; (5)Ic(pul...
2SD1210: DescriptionThe 2SD1210 is a npn silicon epitaxial darlington transistor. Features of the 2SD1210 are:(1)high dc current gain; (2)low collector saturation voltage. The absolute maximum ratings of t...
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The 2SD1210 is a npn silicon epitaxial darlington transistor.
Features of the 2SD1210 are:(1)high dc current gain; (2)low collector saturation voltage.
The absolute maximum ratings of the 2SD1210 can be summarized as:(1)Vcbo:150V; (2)Vceo:100V; (3)Vebo:8.0V; (4)Ic(dc):+-10A; (5)Ic(pulse):+-20A; (6)Ib(dc):1.0A; (7)Pt(Ta=25):3.0W; (8)Pt(Tc=25):80W; (9)Tj:150; (10)Tstg:-55~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.