2SD1166

The 2SD1166 is a kind of silicon NPN triple diffused mesa type (darlington power). It is designed for high power switching application, AC/DC motor control application and inverter application.

There are some features of 2SD1166: (1)high voltage: VCEO(SUS)>900 V; (2)triple diffused design; (3)darlington design.

The following is the maximum ratings of 2SD1166(Ta=25): (1)collector-base voltage, VCBO: 1000 V; (2)collector-emitter voltage, VCEO(SUS): 1000 V; (3)emitter-base voltage, VEBO: 6 V; (4)collector current, IC: 200 A; (5)emitter current, IE: -200 A; (6)base current, IB: 12 A; (7)thermal resistance (double side cooling), Rth(j-c): 0.04/W; (8)junction temperature, Tj: 125; (9)storage temperature, Tstg: -40 to 150.