2SD1246

The 2SD1246 is designed as one kind of NPN epitaxial plannar silicon transistors for large current driving applications, power supplies, relay drivers, lamp drivers and electrical equipment applications.

2SD1246 has three features. (1)Adoption of FBET, MBIT processes. (2)Low saturation voltage. (3)Large current capacity and wide ASO. Those are all the main features.

Some absolute maximum ratings of 2SD1246 have been concluded into several points as follow. (1)Its collector to base voltage would be 30V. (2)Its collector to emitter voltage would be 25V. (3)Its emitter to base voltage would be 6V. (4)Its collector current would be 2A. (5)Its collector current pulse would be 5A. (6)Its collector dissipation would be 0.75W. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SD1246 are concluded as follow. (1)Its collector cutoff current would be max 0.1uA with conditions of Vcb=20V and Ie=0. (2)Its emitter cutoff current would be max 0.1uA with conditions of Veb=4V and Ic=0. (3)Its DC current gain would be min 100 and max 560 with conditions of Vce=2V and Ic=0.1A and would be min 65 and typ 130 with conditions of Vce=2V and Ic=1.5A. (4)Its gain-bandwidth product would be typ 150MHz with conditions of Vce=10V and Ic=50mA. (5)Its common base output capacitance would be typ 19pF with conditions of Vcb=10V and f=1MHz. (6)Its collector to emitter saturation voltage would be typ 0.18V and max 0.4V with conditions of Ic=1.5A and Ib=75mA. (7)Its base to emitter saturation voltage would be typ 0.85V and max 1.2V. And so on. At present we have not got so much information about this IC and we would try hard to get more informaion about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!