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The 2SD1111 is a npn epitaxial planar silicon darlington transistor.Features of the 2SD1111 are :(1)high dc current gain (5000 or greater); (2)large current capacity and wide ASO; (3)low saturation voltage(VCE(sat)=0.8V ...
Mfg:MAT Pack:TO-3 D/C:1000 Vendor:Other Category:Other
Mfg:HIT Pack:SOT-23 D/C:600 Vendor:Other Category:Other
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The 2SD110 parameters:
`High Power Dissipation-: PC= 100W@TC= 25`High Current Capability-: IC = 10A
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The 2SD1092 is a silicon npn double diffused type(pct pricess).Features of the 2SD1092 are:(1)excellent wide safe operating Area.(80W.s at Tc=25); (2)included avalanche diode:Vz=55+15V/-10V; (3)high dc current gain:hFE=5...
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The 2SD1090 is a transistor ,silicon npn triple diffused type.
Features of the 2SD1090 are:(1)high voltage:Vcbo=180V; (2)high dc current gain:hFE=500(Min); (3)large collector power dissipation capability:Pc=80W.
The ab...
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The 2SD1088 features:
·With TO-220 package·High DC current gain·DARLINGTON
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The 2SD1083 is a silicon npn epitaxial planar.
The absolute maximum ratings of the 2SD1083 can be summarized as:(1)Vcbo:150V; (2)Vceo:60V;(3)Pc:20W ; (4)Vebo:5V; (5)Ic:2A; (6)ic(peak):2.5A; (7)ic(surge):5W; (8)Tj:150; ...
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The 2SD1073 features:
·With TO-220 package·High DC current gain·DARLINGTON·Low saturation voltage
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The 2SD1072 is a triple diffused planer type high power darlington.
Features of the 2SD1072 are:(1)high D.C. current gain; (2)high reliability.
The absolute maximum ratings of the 2SD1072 can be summarized as:(1)Vcbo:4...
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The 2SD1071 is a high voltage power amplifier.
Features of the 2SD1071 are:(1)high D.C. current gain; (2)low saturation voltage; (3)high reliability.
The absolute maximum ratings of the 2SD1071 can be summarized as:(1)...
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The 2SD106A is an ultra-compact dual SCALE driver for IGBTs with blocking voltages up to 1200V. The two drive channels feature an electrical isolation between the control electronics and the power section.
The absolute ...
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The 2SD1069 features:
·High Collector Current Capability·High Collector Power Dissipation Capability·Built-in Damper Diode
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Mfg:5000 Pack:ROHM Vendor:Other Category:Other
Mfg:FUJI Pack:TO-3P D/C:05+ Vendor:Other Category:Other
Mfg:SANYO Pack:SOT-23 Vendor:Other Category:Other
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Mfg:SY Pack:TO-3PH D/C:09+ Vendor:Other Category:Other
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Mfg:5000 Pack:FUJITSU Vendor:Other Category:Other
Mfg:NEC Pack:TO-252 D/C:09+ Vendor:Other Category:Other
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The 2SD1073 features:
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min)·Large Collector Power Dissipation·Complement to Type 2SB812
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The 2SD1027 features:
·High DC Current Gain: hFE= 1500(Min.)@ IC= 10A, VCE= 3V·High Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 200V(Min)
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The 2SD1026 parameters:
·High DC Current Gain: hFE= 1500(Min.)@ IC= 10A, VCE= 3V·High Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 100V(Min)
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The 2SD1025 features:
·With TO-220 package·High DC current gain·DARLINGTON
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Pack:TO92S Vendor:Other Category:Other
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The 2SD1007-T1 is one member of the 2SD1007 family which is designed as the NPN epitaxial planar silicon transistor that has one point of feature:High collector to emitter voltage is VCEO > 120 V. The absolute maximum...
Mfg:KESENES D/C:06+ Vendor:Other Category:Other
Mfg:KESENES D/C:06+ Vendor:Other Category:Other
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The 2SD1005-BV is one member of the 2SD1005 family which is designed as the NPN epitaxial planar silicon transistor that has three points of features:(1)World standard miniature package: SOT-89; (2)High collector to base...
Mfg:NEC Pack:SOT-89 D/C:00+ Vendor:Other Category:Other
Mfg:NEC Pack:SOT-89 Vendor:Other Category:Other
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The 2SD1000 is designed as the NPN epitaxial planar silicon transistor that has three points of features:(1)World standard miniature package: SOT-89; (2)High collector to base voltage: VCBO 100V; (3)low collector saturat...
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Mfg:PANASONIC D/C:00+ Vendor:Other Category:Other
Mfg:PANASONIC D/C:00+ Vendor:Other Category:Other
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Mfg:PANASONIC D/C:00+ Vendor:Other Category:Other
Mfg:PANASONIC D/C:00+ Vendor:Other Category:Other
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The 2SC982TM is a silicon npn epitaxial planar type(pct process)(darlington).Feature of the 2SC982TM is:high dc current gain:hFE(1)=5000(Min.)(Ic=10mA);hFE(2)=10000(Min.)(Ic=100mA).
The absolute maximum ratings of the 2...
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D/C:08+ Vendor:Other Category:Other
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The 2SC945LT1 is designed as the NPN epitaxial planar silicon transistor that has two points of features:(1)high voltage 50 V min.; (2)excellent hFE linearity: 0.92 typ..
The absolute maximum ratings of the 2SC945LT1 ca...
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The 2SC945-Y is one of the 2SC945 series.The 2SC945 is a NPN Silicon Transistor.Features of The 2SC945 are:(1)Collector current up to 150mA;(2)High hFE linearity.The absolute maximum ratings of The 2SC945 can be summariz...
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The 2SC945A-T1B-A is one member of the 2SC945 family which is designed as the NPN epitaxial planar silicon transistor that has two points of features:(1)high voltage 50 V min.; (2)excellent hFE linearity: 0.92 typ..
The...
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The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve produ...
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The 2SC941TM is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for high frequency amplifier applications, AM high frequency amplifier applications and AM frequency converter applicat...
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The 2SC940 features:
·With TO-3 package ·High current capability ·Wide area of safe operation
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The 2SC9018 is am converter, FM/RF amplifier of low noise transistor. The feature of 2SC9018 is high current gain bandwidth product fT = 1,100 MHz.
The absolute maximum ratings of the 2SC9018 are: (1)collector-base volt...
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The 2SC9016 is am converter, FM/RF amplifier of low noise. The feature of 2SC9016 is high total power dissipation.
The absolute maximum ratings of the 2SC9016 are: (1)collector-base voltage: 30V; (2)collector-emitter vo...
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The 2SC9014 is pre-amplifier, low level & low noise transistor. The features of 2SC9014 are as follows: (1)high total power dissipation(PT=450mW); (2)high hFE and good linearity; (3)complementary to SS9015.
The abso...
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Mfg:NEC Pack:TO-92 D/C:06+ Vendor:Other Category:Other
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The 2SC867 features:
·With TO-66 package ·High collector-base breakdown voltage:VCBO=400V(min)
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2SC815 is a kind of low frequency ampifier and high frequency oscilator transistors which is the complement to KSA539. 2SC815 has some absolute maximum ratings. Collecor-base voltage (VCBO) is 60 V . Collector...
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The 2SC792 features:
·With TO-3 package·High breakdown voltage
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The 2SC789 features:
·With TO-220C package·Low collector saturation voltage
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The 2SC732TM is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for low noise audio amplifier applications. There are some features as follows: (1)excellent hFE linearity: hFE (IC=0.1...
Pack:TO-3 D/C:00+ Vendor:Other Category:Other
Pack:TO-3 D/C:00+ Vendor:Other Category:Other
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The 2SC681 is designed as NPN silicon power transistors for use in B/W TV horizontal output applications.2SC681 has two features. The first one is about its collector to emitter sustaining voltage which would be min 70V....
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The 2SC643A features:
·With TO-3 package·High voltage,high reliability·Low collector saturation voltage
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The 2SC643 features:
·With TO-3 package·High voltage,high reliability·Low collector saturation voltage
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