Transistors Bipolar (BJT) IGBT & Power Bipolar
2SD1047: Transistors Bipolar (BJT) IGBT & Power Bipolar
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 140 V | ||
Emitter- Base Voltage VEBO : | 6 V | DC Collector/Base Gain hfe Min : | 50 A | ||
Maximum Operating Frequency : | 20 MHz | Mounting Style : | Through Hole | ||
Package / Case : | TO-3P | Packaging : | Tube |