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Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3357-T1-ARF is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic. And this device has two points of features: (1)Low Noise and High Gain: NF = 1.1 dB TYP...
Vendor:Other Category:Other
The 2SC3357-T1-ARE is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic. And this device has two points of features: (1)Low Noise and High Gain: NF = 1.1 dB TYP...
Vendor:Other Category:Other
The 2SC3357-T1RF is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic. And this device has two points of features: (1)Low Noise and High Gain: NF = 1.1 dB TYP.,...
Vendor:Other Category:Other
The 2SC3357-RF/RE belongs to the series of 2SC3357.It is a kind of NPN silicon epitaxial transistor.It is designed for low noise amplifer at VHF,UHF and CATV band.It has large dynamic range and good current characteristi...
Vendor:Other Category:Other
The 2SC3357RF/RE is designed as one kind of NPN silicon RF transistor device that has some points of features:(1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 7.5 dB TYP.@VCE = 10 V, IC = 7mA, f = 1.0 GHz and NF = 1.8 ...
Vendor:Other Category:Other
The 2SC3357 is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic. And this device has two points of features: (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga =...
Vendor:Other Category:Other
The 2SC3356-T1B-AR25 is one member of the 2SC3356 family which is designed as the NPN silicon epitaxial transistor that has two points of features:(1)Low noise and high gain: NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V...
Vendor:Other Category:Other
The 2SC3356-T1B-AR24 is one member of the 2SC3356 family which is designed as the NPN silicon epitaxial transistor that has two points of features:(1)Low noise and high gain: NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V...
Vendor:Other Category:Other
The 2SC3356-T1BR25 is one member of the 2SC3356 family which is designed as the NPN silicon epitaxial transistor that has two points of features:(1)Low noise and high gain: NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, ...
Vendor:Other Category:Other
The 2SC3356-T1BR24 is one member of the 2SC3356 family which is designed as the NPN silicon epitaxial transistor that has two points of features:(1)Low noise and high gain: NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, ...
Vendor:Other Category:Other
The 2SC3356R25/R24 is designed as one kind of NPN silicon RF transistor device that has some points of features:(1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 11.0 dB TYP.@VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High ...
Vendor:Other Category:Other
The 2SC3356-R24/R25 belongs to the series of 2SC3356.It is a kind of NPN silicon epitaxial transistor.It is designed for low noise amplifer at VHF,UHF and CATV band.It has good dynamic range and good current characterist...
Vendor:Other Category:Other
The 2SC3356F is designed as NPN silicon plastic encapsulated transistor. 2SC3356F has three features.The first one is that it would have low noise amplifier at VHF,UHF and CATV band.The second one is that it w...
Vendor:Other Category:Other
The 2SC3356 is designed as one kind of microwave low noise amplifier NPN silicon epitaxial transistor that has dynamic range and good current characteristic such as (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 11 d...
Vendor:Other Category:Other
The 2SC3356 R24 is designed as one kind of microwave low noise amplifier NPN silicon epitaxial transistor that has dynamic range and good current characteristic such as (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = ...
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3355 parameter:
`Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga= 9.0 dB TYP. @VCE= 10 V, I = 40 mA, f = 1.0 GHz`High Power GainMAG= 11 dB TYP. @...
Mfg:NEC Pack:DIP D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3352 features:
·With TO-220Fa package·High voltage·High speed switching
Vendor:Other Category:Other
The 2SC3346 features:
`With TO-220C package`Complement to type 2SA1329`High speed switching time: tstg=1.0s(Typ.)`Low collector saturation voltage: VCE(sat)=0.4V(Max.)@IC=6A
Vendor:Other Category:Other
The 2SC3345 is a high current switching.
Features of the 2SC3345 are:(1)low collector saturation voltage:Vce(sat)=0.4(Max.)(at Ic=6A); (2)high speed switching time:tstg=1.0s(typ.); (3)complementary to 2SA1328.
The abso...
Mfg:HITACHI Pack:SOT-89 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
Mfg:TOSHIBA Pack:SOT-23 D/C:04+ Vendor:Other Category:Other
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
Mfg:TOSHIBA Pack:SOT-23 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3320 is designed as the silicon NPN power transistor device that can be used in wide range of applications such as (1)switching regulators; (2)ultrasonic generators; (3)high frequency inverters; (4)general purpose...
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3317 features:
·With TO-220C package·High voltage,high speed switching·High reliability
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3310 features:
·With TO-220Fa package·High collector breakdown voltage·Excellent Switching times
Vendor:Other Category:Other
The 2SC3309 features:
·With TO-220Fa package·High collector breakdown voltage·Excellent switching times
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3306 features:
·With TO-3P(I) package·Collector-emitter sustaining voltage-VCEO(sus)=400V(Min)·Fast switching times
Vendor:Other Category:Other
The 2SC3300 features:
Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min)Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A
Vendor:Other Category:Other
The 2SC3299 features:
·With TO-220Fa package·Complement to type 2SA1307·Low saturation voltage·High speed switching time
Mfg:TOSHIBA Pack:TO-220Fa D/C:08+ Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-220Fa D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3298 features:
·With TO-220Fa package·Complement to type 2SA1306,2SA1306A,2SA1306B
Mfg:SY Pack: TO-3P D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3296 features:
·With TO-220Fa package·Wide area of safe operation·Complement to type 2SA1304
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
The 2SC3294 feature:
` Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3285 features:
·With TO-3PN package·High speed switching·Good linearity of hFE·High VCBO
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3280 features:
·With TO-3PL package·Complement to type 2SA1301
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3272 features:
·With TO-126 package·High breakdown voltage
Vendor:Other Category:Other
The 2SC3265 is designed as the TOSHIBA transistor silicon NPN epitaxial type (PCT process) that can be used in low frequency power amplifier and power switching applications. Features of this device are:(1)high DC curren...
Vendor:Other Category:Other
The 2SC3264 features:
·High Collector-Emitter Breakdown Voltage-V(BR)CEO= 230V(Min)·Good Linearity of hFE·Complement to Type 2SA1295
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3258 features:
·With TO-220 package·Complement to type 2SA1293·Low collector saturation voltage·High speed switching time
Vendor:Other Category:Other
The 2SC3257 features:
·With TO-220 package·High collector breakdown voltage·Excellent switching times
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3250 features:
·With TO-220 package·High VCEO·Large PC
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3242 is designed as silicon NPN epitaxial type transistor for small type motor drive, solenold drive and power supply application. Typical applications include small type motor drive, power supply for VCR, deck an...
Vendor:Other Category:Other
The 2SC3241 is designed as NPN epitaxial planar type mitsubishi RF power transistor which is specifically designed for high power amplifiers in HF band.2SC3241 has five features. (1)High gain which would be larger than 1...
Vendor:Other Category:Other
The 2SC3240 is designed as silicon NPN epitaxial type transistor specifically for high power amplifiers in HF band. Typical applications is output stage of transmitter in HF band SSB mobile ratio sets.2SC3240 has four fe...
Vendor:Other Category:Other
The 2SC3235 features:
·With TO-220 package·High voltage,high speed·Low saturation voltage
Mfg:NEC Pack:TO220 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3231 features:
·With TO-220 package·Wide area of safe operation
Vendor:Other Category:Other
The 2SC3230 features:
·With TO-220 package·Complement to type 2SA1276·Good linearity of hFE
Vendor:Other Category:Other
The 2SC3229 features:
·With TO-220F package·High voltage: VCEO=300V(min)
Mfg:TOSHIA Pack:TL-92L D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3223 features:
·With TO-3 package·High speed,high current·Low saturation voltage
Vendor:Other Category:Other
The 2SC3220 features:
·With TO-247 package·Switching power transistor·High breakdown voltage
Vendor:Other Category:Other
The 2SC3214 features:
·With TO-3 package·High voltage ,high speed
Vendor:Other Category:Other
The 2SC3212A features:
·With TO-3PFa package·Low collector saturation voltage·High VCBO·High speed switching
Vendor:Other Category:Other
The 2SC3212 features:
·With TO-3PFa package·Low collector saturation voltage·High VCBO·High speed switching
Vendor:Other Category:Other
The 2SC3211A features:
·With TO-3PFa package·High VCBO·Low collector saturation voltage
Vendor:Other Category:Other
The 2SC3211 features:
·With TO-3PFa package·High VCBO·Low collector saturation voltage
Vendor:Other Category:Other
The 2SC3210 features:
·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage
Vendor:Other Category:Other
The 2SC3189 consists of a phototransistor optically coupled to 2 gallium arse- nide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a ...
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3182N features:
`With TO-3P(I) package`Complement to type 2SA1265N
Pack:TO3P Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3181N features:
·With TO-3P(I) package·Complement to type 2SA1264N
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3180N features:
·With TO-3P(I) package·Complement to type 2SA1263N
Mfg:TOS D/C:99 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3171 features:
·With TO-3PFa package·High collector current·High speed switching
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