2SC3357-RF/RE

The 2SC3357-RF/RE belongs to the series of 2SC3357.It is a kind of NPN silicon epitaxial transistor.It is designed for low noise amplifer at VHF,UHF and CATV band.It has large dynamic range and good current characteristic.

The following is the features of 2SC3357-RF/RE.(1) low noise; (2) high gain; (3) large PT in small package.

What comes next is the absolute ratings of 2SC3357-RF/RE at TA is 25.(1): collector to base voltage (VCBO) is 20 V; (2): collector to emitter voltage(VCEO) is 12 V; (3): emitter to base voltage(VEBO) is 3.0 V; (4): collector current(IC) is 100 mA; (5): total power dissipation(PT) is 1.2 mW; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is from -65 to 150; (8): thermal resistance(RTH) is 65/W; (9): the maximum collector cutoff current is 1.0 A when VCE is 10 V,IE is 0; (10): the maximum emitter cutoff current of 2SC3357-RF/RE is 1.0 A at VEB is 1 V and IC is 0; (11): the maximum
collector cutoff current is 1.0 A at VCB is 10 V and IE is 0; (12): the typical of DC current gain is 120,the minimum is 50 and the maximum is 300 when VCE is 10 V,IC is 20 mA; (13): insertion power gain is 9 at VCE is 10 V,IC is 20 mA and f is 1.0 GHz; (14): the maximum of feed-back capacitance is 1.0 pF when VCB is 10 V,IE is 0 and F is 1.0 MHz.