2SC3189

Features: SpecificationsDescription The 2SC3189 consists of a phototransistor optically coupled to 2 gallium arse- nide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance b...

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SeekIC No. : 004222226 Detail

2SC3189: Features: SpecificationsDescription The 2SC3189 consists of a phototransistor optically coupled to 2 gallium arse- nide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package...

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Part Number:
2SC3189
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Features:






Specifications






Description

      The 2SC3189 consists of a phototransistor optically coupled to 2 gallium arse- nide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
      This document describes part-number-specific changes to recommended operating conditions and revised electrical specifications, as applicable, from those described in the general MPC8241 Integrated Processor Hardware Specifications (Order No. MPC8241EC/D). The MPC8241 combines a MPC603e PowerPC™ core microprocessor with a PCI bridge.
      The Forward Biased Safe Operating Area of 2SC3189 curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal Resistance - General Data and Its Use.   Switching between the off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) - TC)/(RqJC).   A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 






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