2SC3240

The 2SC3240 is designed as silicon NPN epitaxial type transistor specifically for high power amplifiers in HF band. Typical applications is output stage of transmitter in HF band SSB mobile ratio sets.

2SC3240 has four features. (1)High gain which means Gpe>=11.5dB and Po>=100W at f=30MHz, Vcc=12.5V and Pin=7W. (2)High ruggedness: ability to withstand 20:1 load VSWR when operated at f=30MHz, Po=100W and Vcc=12.5V. (3)Emitter ballasted construction. (4)Low thermal resistance ceramic package with flange. Those are all the main features.

Some absolute maximum ratings of 2SC3240 have been concluded into several points as follow. (1)Its collector to base voltage would be 50V. (2)Its emitter to base voltage would be 5V. (3)Its collector to base voltage would be 20V. (4)Its collector current would be 25A. (5)Its collector dissipation would be 270W. (7)Its junction temperature would be +175°C. (8)Its storage temperature range would be from -55°C to +175°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to the device.

Also some electrical characteristics of 2SC3240 are concluded as follow. (1)Its collector to base breakdown voltage would be min 50V with test conditions of Ic=20mA and Ie=0. (2)Its emitter to base breakdown voltage would be min 5V with test conditions of Ie=20mA and Ic=0. (3)Its collector to emitter breakdown voltage would be min 20V with conditions of Ic=100mA. (4)Its collector cutoff current would be max 5mA with conditions of Vcb=15V and Ie=0. (5)Its emitter cutoff current would be max 5mA. (6)Its DC forward current gain would be min 10 and typ 50 and max 180. (7)Its collector efficiency would be min 55% and typ 60% with conditions of f=30MHz, Vcc=12.5V and Pin=7W. (8)Its output power would be min 100W and typ 110W. And so on. If you have any question or suggestion please contact us for details. Thank you!