2SC3357-T1-A RE

The 2SC3357-T1-ARE is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic. And this device has two points of features: (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, Ic = 7 mA, f = 1.0 GHz and NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, Ic = 40 mA, f = 1.0 GHz; (2)Large PT in Small Package: PT : 2 W with 16 cm2 x 0.7 mm Ceramic Substrate.

The absolute maximum ratings of the 2SC3357-T1-ARE can be summarized as:(1)Collector to Base Voltage: 20 V;(2)Collector to Emitter Voltage: 12 V;(3)Emitter to Base Voltage: 3.0 V;(4)Collector Current: 100 mA;(5)Total Power Dissipation: 1200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -65 to +150 .

The electrical characteristics of 2SC3357-T1-ARE can be summarized as:(1)Collector Cutoff Current: 1.0 uA;(2)Emitter Cutoff Current: 1.0 uA;(3)DC Current Gain: 50 to 300;(4)Gain Bandwidth Product: 6.5 GHz;(5)Feed-Back Capacitance: 0.65 to 1.0 pF;(6)Insertion Power Gain: 9 dB;(7)Noise Figure: 1.1 dB. If you want to know more information such as the electrical characteristics about the 2SC3357-T1-ARE, please download the datasheet in www.seekic.com or www.chinaicmart.com.