2SC3356-R24/R25

The 2SC3356-R24/R25 belongs to the series of 2SC3356.It is a kind of NPN silicon epitaxial transistor.It is designed for low noise amplifer at VHF,UHF and CATV band.It has good dynamic range and good current characteristic.

The following the features of 2SC3356-R24/R25.(1) low noise; (2) high gain; (3) high power gain.

What comes next is the absolute ratings of 2SC3356-R24/R25 at TA is 25.(1): collector to base voltage (VCBO) is 20 V; (2): collector to emitter voltage(VCEO) is 12 V; (3): emitter to base voltage(VEBO) is 3.0 V; (4): collector current(IC) is 100 mA; (5): total power dissipation(PT) is 200 mW; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is from -65 to 150;(8): the maximum collector cutoff current is 1.0 A when VCB is 10 V,IE is 0; (9): the maximum emitter cutoff current is 1.0 A at VEB is 1 V and IC is 0; (10): the typical of DC current gain is 120,the minimum is 50 and the maximum is 300 when VCE is 10 V,IC is 20 mA; (11): the typical of insertion power gain is 11.55 dB at VCE is 10 V,IC is 20 mA and f is 1.0 GHz; (14): the maximum of feed-back capacitance is 1.0 pF,the typical is 0.55 pF when VCB is 10 V,IE is 0 and f is 1.0 MHz.