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2SC3357

Features: ·Low Noise and High GainNF = 1.1 dB TYP., Ga = 7.5 dB TYP.@VCE = 10 V,IC = 7mA, f = 1.0 GHzNF = 1.8 dB TYP., Ga = 9.0 dB TYP.@VCE = 10 V,IC = 40 mA, f = 1.0 GHz·High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHzSpecifications Parameter Symbol Rating Unit Collector-emit...

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SeekIC No. : 004222308 Detail

2SC3357: Features: ·Low Noise and High GainNF = 1.1 dB TYP., Ga = 7.5 dB TYP.@VCE = 10 V,IC = 7mA, f = 1.0 GHzNF = 1.8 dB TYP., Ga = 9.0 dB TYP.@VCE = 10 V,IC = 40 mA, f = 1.0 GHz·High power gain : MAG = 10 ...

2SC3357 Data Sheet

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Part Number:
2SC3357
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP.@VCE = 10 V,
IC = 7mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP.@VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
·High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz




Specifications

Connection Diagram

Parameter Symbol Rating Unit
Collector-emitter voltage VCBO 20 V
Collector-base voltage VCEO 12 V
Emitter - base Voltage VEBO 3.0 V
Collector current IC 100 mA
Total power dissipation PT* 1.2 W
Thermal Resistance Rth(j-a)* 62.5 °C/W
Jumction temperature Tj 150 °C
Storage temperature Tstg 65 to +150 °C
* mounted on 16 cm2 X 0.7 mm(t) Ceramic Substrate




Description

The 2SC3357 is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic. And this device has two points of features: (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, Ic = 7 mA, f = 1.0 GHz and NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, Ic = 40 mA, f = 1.0 GHz; (2)Large PT in Small Package: PT : 2 W with 16 cm2 x 0.7 mm Ceramic Substrate.

The absolute maximum ratings of the 2SC3357 can be summarized as:(1)Collector to Base Voltage: 20 V;(2)Collector to Emitter Voltage: 12 V;(3)Emitter to Base Voltage: 3.0 V;(4)Collector Current: 100 mA;(5)Total Power Dissipation: 1200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -65 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 1.0 uA;(2)Emitter Cutoff Current: 1.0 uA;(3)DC Current Gain: 50 to 300;(4)Gain Bandwidth Product: 6.5 GHz;(5)Feed-Back Capacitance: 0.65 to 1.0 pF;(6)Insertion Power Gain: 9 dB;(7)Noise Figure: 1.1 dB. If you want to know more information such as the electrical characteristics about the 2SC3357, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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