2SC3242

DescriptionThe 2SC3242 is designed as silicon NPN epitaxial type transistor for small type motor drive, solenold drive and power supply application. Typical applications include small type motor drive, power supply for VCR, deck and player.2SC3242 has four features. (1)High collector current Ic=2A...

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SeekIC No. : 004222243 Detail

2SC3242: DescriptionThe 2SC3242 is designed as silicon NPN epitaxial type transistor for small type motor drive, solenold drive and power supply application. Typical applications include small type motor dri...

floor Price/Ceiling Price

Part Number:
2SC3242
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Description



Description

The 2SC3242 is designed as silicon NPN epitaxial type transistor for small type motor drive, solenold drive and power supply application. Typical applications include small type motor drive, power supply for VCR, deck and player.

2SC3242 has four features. (1)High collector current Ic=2A. (2)Low Vce(sat) which would be typ 0.17V at Ic=1A. (3)High hFE which would be from 150 to 800. (4)High collector dissipation which would be 900mW. Those are all the main features.

Some absolute maximum ratings of 2SC3242 have been concluded into several points as follow. (1)Its collector to base voltage would be 20V. (2)Its emitter to base voltage would be 6V. (3)Its collector to base voltage would be 16V. (4)Its peak collector current would be 3A. (5)Its collector current would be 2A. (6)Its collector dissipation would be 900mW. (7)Its junction temperature would be +150°C. (8)Its storage temperature range would be from -55°C to +150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to the device.

Also some electrical characteristics of 2SC3242 are concluded as follow. (1)Its collector to base breakdown voltage would be min 20V with test conditions of Ic=10uA and Ie=0. (2)Its emitter to base breakdown voltage would be min 6V with test conditions of Ie=10uA and Ic=0. (3)Its collector to emitter breakdown voltage would be min 16V with conditions of Ic=2mA. (4)Its collector cutoff current would be max 0.2uA with conditions of Vcb=16V and Ie=0. (5)Its emitter cutoff current would be max 0.2uA. (6)Its DC forward current gain would be min 150 and max 800. (7)Its collector to emitter saturation voltage would be typ 0.17V and max 0.3V. (8)Its collector output capacitance would be typ 28pF. (9)Its gain band width product would be typ 80MH. And so on. If you have any question or suggestion please contact us for details. Thank you!




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