2SC3356R25/R24

The 2SC3356R25/R24 is designed as one kind of NPN silicon RF transistor device that has some points of features:(1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 11.0 dB TYP.@VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High power gain: MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1 GHz.

The absolute maximum ratings of the 2SC3356R25/R24 can be summarized as:(1)Collector-base voltage: 20 V;(2)Collector-emitter voltage: 12 V;(3)Emitter-base voltage: 3.0 V;(4)Collector current: 100 mA;(5)Total power dissipation: 0.2 W;(6)Junction temperature: 150 ;(7)Storage temperature: -65 to +150 ;(8)Thermal Resistance: 62.5 /W.

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 1.0 uA;(2)Emitter cutoff current: 1.0 uA;(3)DC current gain: 50 to 250;(4)Insertion Power Gain: 11.5 dB;(5)Reverse transfer capacitance: 0.55 to 1.0 pF;(6)Transition frequency: 7.0 GHz. If you want to know more information about the 2SC3356R25/R24, please download the datasheet in www.seekic.com or www.chinaicmart.com .