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The 2SC3910 features:
`High Speed Switching High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) `Good Linearity of h FE
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The 2SC3907 features:
·With TO-3P(I) package·Complement to type 2SA1516
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Mfg:SAM Pack:TO-92 D/C:07+ Vendor:Other Category:Other
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The 2SC3897 features:
·With TO-3PML package·High speed·High breakdown voltage·High reliability
Vendor:Other Category:Other
The 2SC3896 features:
·With TO-3PML package·High speed·High breakdown voltage·High reliability
Vendor:Other Category:Other
The 2SC3895 features:
·With TO-3PML package·High speed·High breakdown voltage·High reliability
Vendor:Other Category:Other
The 2SC3894 features:
·With TO-3PML package·High speed·High breakdown voltage·High reliability
Vendor:Other Category:Other
The 2SC3893 features:
·With TO-3P(H)IS package·Built-in damper diode·High voltage ,high speed
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The 2SC3892A features:
·With TO-3P(H)IS package·Built-in damper diode·High voltage ,high speed
Vendor:Other Category:Other
The 2SC3892 features:
·With TO-3P(H)IS package·Built-in damper diode·High voltage ,high speed
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC388ATM is a toshiba transistor silicon npn epitaxial planar type.Features of the 2SC388ATM are:(1)high gain:Gpe=33dB(Typ.)(f=45MHz); (2)good linearity of hFE.
The absolute maximum ratings of the 2SC388ATM can be ...
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The 2SC3886A features:
·With TO-3P(H)IS package·High voltage ,high speed
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The 2SC3886 features:
·With TO-3P(H)IS package·High speed·High voltage
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The 2SC388 is a kind of transistor. The device is designed for TV final picture IF amplifier applications. It features Gpe=33 dB typ (f=45 MHz).
What comes next is about the absolute maximum ratings of 2SC388 at Ta=25: ...
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The 2SC3873 features:
·With TO-3PFa package·High VCBO·High speed switching·Good linearity of hFE·Wide area of safe operation
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
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Here is the description about 2SC3869 of the Silicon NPN triple diffusion planar type for high-speed switching. It has five features. The first one is that it is high-speed switching. And it is high collector to ba...
Vendor:Other Category:Other
The 2SC3868 features:
·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
Here is the description about 2SC3866 of the Silicon NPN Power Transistors.It is With TO-220F package. It is High speed switching. And it is High voltage. And it is High reliability. APPLICATIONS: NO.1 Switchi...
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The 2SC3866 features:
`With TO-220Fa package`High speed switching`High voltage`High reliability
Vendor:Other Category:Other
The 2SC3865 is a npn epitaxial planar type silicon transistor.
Features of the 2SC3865 are:((1)high voltage,high speed switching; (2)high reliability.
The absolute maximum ratings of the 2SC3865 can be summarized as:(...
Vendor:Other Category:Other
Here is the description about 2SC3862 of the TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications Exchange of emitter for base in 2SC3120. Here are the maximum ratings of 2SC3862. The Collec...
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The 2SC3860 is a pnp/npn epitaxial planar silicon transistors,switching applications(with bias resistance).Features of the 2SC3860 are:(1)on-chip bias resistance:R1=10k; (2)small-sized package:SPA.
The absolute maximum ...
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The 2SC3858 features:
·With MT-200 package·Complement to type 2SA1494
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The 2SC3857 features:
·With MT-200 package·Complement to type 2SA1493
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The 2SC3856 features:
·With TO-3PN package·Complement to type 2SA1492
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The 2SC3855 features:
·With TO-3PN package·Complement to type 2SA1491
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The 2SC3854 features:
·With TO-3PN package·Complement to type 2SA1490
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The 2SC3853 features:
·With TO-3PN package·Complement to type 2SA1489
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Here is the description about 2SC3852A-2SC3852 of the Silicon NPN Epitaxital Planar Transistors, driver for solenoid and motor, series regulator and general purpose. There absolute maximum ratings are at Ta =...
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Here is the description about 2SC3852A-2SC3852 of the Silicon NPN Epitaxital Planar Transistors, driver for solenoid and motor, series regulator and general purpose. There absolute maximum ratings are at Ta =...
Vendor:Other Category:Other
The 2SC3852 parameters:
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A
Vendor:Other Category:Other
The 2SC3851A features:
·With TO-220F package·Complement to type 2SA1488/1488A
Vendor:Other Category:Other
The 2SC3851 features:
·With TO-220F package·Complement to type 2SA1488/1488A
Vendor:Other Category:Other
the 2SC3850 features:
·With TO-3PN package·Good linearity of hFE·Low collector saturation voltage
Vendor:Other Category:Other
Here is the description about 2SC3847 of the Silicon High Speed Power Transistors. The absolute maximum ratings of 2SC3847 are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter...
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Here is the description about 2SC3841 of the UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD.The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF ...
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Here is the description about 2SC3840 of the NPN Silicon Power Transistors. Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is...
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Here is the description about 2SC383TM of the NPN Silicon epitaxial planar type. Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCE...
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Here are the descriptions about the High-Frequency Amplifier Transistor NPN Silicon-- 2SC3838Q. And the maximum ratings of 2SC3838Q (Ta=25 C) are here. The Coll...
Vendor:Rohm Semiconductor(VA) Category:Discrete Semiconductor Products
TRANS NPN 11V 50MA SOT-346The 2SC3838KT146P is designed as one kind of high-frequency amplifier transistor (11V, 50mA, 3.2GHz). Features of this device are:(1)High transition frequency (Typ. fT= 1.5GHz); (2)Small rbb Cc and high gain (Typ. 4ps); ...
Vendor:Other Category:Other
The 2SC3838KT146P is designed as one kind of high-frequency amplifier transistor (11V, 50mA, 3.2GHz). Features of this device are:(1)High transition frequency (Typ. fT= 1.5GHz); (2)Small rbb Cc and high gain (Typ. 4ps); ...
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Mfg:5000 Pack:ROHM Vendor:Other Category:Other
Mfg:ROHM Pack:SOT-23 Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
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The 2SC3835G features:
·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC=3A·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min)·Good Linearity of hFE
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The 2SC3835 features:
·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V (Min)·Good Linearity of hFE
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`Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A`Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min)`Good Linearity of hFE
The 2SC3834 is a type of isc silicon NPN power transistor.low collector sa...
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The 2SC3833 features:
·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed·High Reliability
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The 2SC3832 features:
·With TO-220C package·High voltage·High speed switching
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The 2SC3831 features:
·With TO-3PN package·High voltage·High speed switching
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The 2SC3830 features:
·With TO-220C package·High voltage·High speed switching
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3824A is a type of power transistor,which is silicon PNP triple-diffused planar type.It has high breakdown voltage and high speed switching.Features of 2SC3824A are:(1)high speed switching;(2)high collector-emitt...
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
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Here is the description about 2SC3810 of the NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE. The absolute maximum ratings of 2SC3810 are at Ta = 25°C a...
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The 2SC380TM-Y is designed as the TOSHIBA transistor silicon NPN epitaxial silicon transistor device that can be used in high frequency amplifier applications. And this device has two points of features: (1)high power ga...
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The 2SC380TM is a toshiba transistor silicon npn epitaxial planar type(pct process).Features of the 2SC380TM are:(1)high power gain:Gpe=29dB(Typ.)(f=10.7MHz); (2)recommended for FM IF,OSC stage and AM CONV.IF Stage.
The...
Mfg:5000 Pack:NEC Vendor:Other Category:Other
The 2SC3809 is NPN silicon epitaxial transistor for microwave amplifiers and ultra high speed switchings indusreal use.The 2SC3809 has two features including the 2SC3809 is an NPN silicon epitaxial dual transistor ...
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The 2SC3807MP is NPN Epitaxial Planar Silicon Transistor and with 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications.It can be applied to Low-frequency general-purpose amplifiers, drivers.It has 5 fe...
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The 2SC3807C is NPN Epitaxial Planar Silicon Transistor and with 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications.The 2SC3807C can be applied to Low-frequency general-purpose amplifiers, drivers.Th...
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Mfg:TOSHIBA Pack:SOT-89 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3796 is a npn epitaxial planar type silicon transistor.
Features of the 2SC3796 are:((1)high speed switching; (2)high collector-base voltage; (3)low collector-emitter saturation voltage.
The absolute maximum ra...
Mfg:PANASONIC Pack:TO-220 D/C:09+ Vendor:Other Category:Other
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Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
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The 2SC3794A features:
·With TO-220Fa package·High VCBO·High speed switching·Low collector saturation voltage
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The 2SC3794 features:
·With TO-220Fa package·High VCBO·High speed switching·Low collector saturation voltage
Mfg:HITACHI Pack:SOT-23 Vendor:Other Category:Other
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The 2SC3792 is a npn epitaxial planar type silicon transistor.
Features of the 2SC3792 are:(1)adoption of FBET process; (2)high dc current gain; (3)high Vebo (Vebo25V); (4)high reverse hFE(150typ.); (5)small on resistan...
Mfg:SANYO Pack:TO-126 D/C:5000 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC3789D is one of the 2SC3789 series.The 2SC3789D is a npn epitaxial planar type silicon transistor.
Features of the 2SC3789D are:(1)high breakdown voltage(Vceo300V); (2)excellent high frequency characteristic(c r...
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The 2SC3786 is a npn epitaxial planar type silicon transistor.
Features of the 2SC3786 are:(1)high dc current gain ; (2)wide aso ; (3)on-chip zener diode of 60+-10V between collector and base ; (4)uniformity in collecto...
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The 2SC3785 is a npn epitaxial planar type silicon transistor.
Features of the 2SC3785 are:(1)high dc current gain ; (2)wide aso ; (3)on-chip zener diode of 60+-10V between collector and base ; (4)uniformity in collecto...
Vendor:Other Category:Other
The 2SC3784 is a npn epitaxial planar type silicon transistor.
Features of the 2SC3784 are:(1)high dc current gain ; (2)wide aso ; (3)on-chip zener diode of 60+-10V between collector and base ; (4)uniformity in collecto...
Vendor:Other Category:Other
The 2SC3783 is a transistor,silicon npn triple diffused type.
Features of the 2SC3783 are:(1)ecellent switching times:tr=1.0s(Max),tf=1.0s(Max); (2)high collector breakdown voltage:Vceo=800V.
The absolute maximum ratin...
Vendor:Other Category:Other
The 2SC3781 is a npn epitaxial planar silicon transistor.
Features of the 2SC3781 are:(1)high fT(fT typ=500MHz); (2)small reverse transfer capacitance and excellent hf response; (3)complementary pnp and npn types; (4)ad...
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The 2SC3780 is a npn epitaxial planar silicon transistor.
Features of the 2SC3780 are:(1)high fT(fT typ=800MHz); (2)small reverse transfer capacitance and excellent high frequency characteristic; (3)complementary pnp an...
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