2SC3809

      The 2SC3809 is NPN silicon epitaxial transistor for microwave amplifiers and ultra high speed switchings indusreal use.The 2SC3809 has two features including the 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating current range;dual chips in one package can achieve high performance for differential amplifiers and current mode logic (CML) circuits.
      The absolute maximun ratings of the 2SC3809 at Ta=25°C having Collector to Base Voltage VCBO is 20 V;Collector to Emitter Voltage VCEO is 12 V;Emitter to Base Voltage VEBO is 3 V;Collector Current IC is 100mA;Junction temperature is 200°C maximum;Storage temperature is -65 to +200°C ;total power Dissipation PT is 300mW etc.    
      Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration at the metalized area of the transistor. You can use alcohol as a solvent.Do not apply ultra-sonic-cleaning on this product.
      To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, firecontainment, and antifailure features.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
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