Features: SpecificationsDescription Here is the description about 2SC383TM of the NPN Silicon epitaxial planar type. Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 45V. The Collector-Base Voltage(VCBO)is 50V.The...
2SC383TM: Features: SpecificationsDescription Here is the description about 2SC383TM of the NPN Silicon epitaxial planar type. Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwis...
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Here is the description about 2SC383TM of the NPN Silicon epitaxial planar type.
Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 45V. The Collector-Base Voltage(VCBO)is 50V.The Emitter-Base Voltage (VEBO )is 4V. The collector Current is 50mA. The Emitter Current is -50mA. The Collector Power Dissipation is 300mW.Its junction temperature is 125°C. Its storage temperature is from -55°C to +125°C.
And here are the Electrical Characteristics (Ta =25°C). The Collector cut-off current is from min to 0.1uA. The Emitter cut-off current is from min to 0.1uA. The Collector-Emitter sustaining Voltage is from min to 0.2V. The base-Emitter sustaining Voltage is from min to 1.5V.The Collector-Base Breakdown Voltage is from 45 Vdc to Max. The DC current gain is from 20 to 100.
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