2SC3838Q

      Here are the descriptions about the High-Frequency Amplifier Transistor NPN Silicon-- 2SC3838Q.                                                
      And the maximum ratings of 2SC3838Q (Ta=25 C) are here. The Collector-Emitter Voltage (VCEO )is 11 Vdc. The Collector-Base Voltage(VCBO)is 20 Vdc.The Emitter-Base Voltage (VEBO )is 3.0 Vdc.The Collector Current-Continuous (IC)is 50 mAdc.                                                          And the THERMAL CHARACTERISTICS are here.  Total Device Dissipation FR-5 Board (1)(TA =25 C) is 200 mW . Derate above 25 C is 1.6 mW/ oC. The Thermal Resistance, Junction Ambient is 625 oC/W. Junction and Storage Temperature are from -55 to +150.oC                             
      And the electrical characteristics of  2SC3838Q are here. The Collector-Emitter Breakdown Voltage(IC =1 mAdc, IB=0) is from 11Vdc to Max. The Collector-Base Breakdown Voltage(IC =10 uAdc, I E=0) from 20 Vdc to Max. The Emitter-Base Breakdown Voltage(IE  =10 uAdc, IC =0)is from 3.0 Vdc to Max. The Collector Cufoff Current(VCB =10Vdc, I E=0) is from Min to 0.5uAdc. The Emitter Cufoff Current(VEB =2Vdc, IC=0) is from Min to 0.5uAdc.
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