2SC3810

      Here is the description about 2SC3810 of the NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE.
      The absolute maximum ratings of 2SC3810 are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 10V. The Collector-Base Voltage(VCBO)is 20V.The  Emitter-Base Voltage (VEBO )is 1.5V. The collector Current is 65mA. The Total Power Dissipation is 240mW.Its junction temperature is 200°C. Its storage temperature is from -65°C to +200°C.
      And here are the Electrical Characteristics of 2SC3810(Ta =25°C). The Collector-Emitter Breakdown Voltage is from 10V to Max. The Collector-Base Breakdown Voltage is from 20 Vdc to Max. The Emitter-Base Breakdown Voltage is from 1.5Vdc to Max. The DC current gain is from 50 to 250.The Collector cut-off current is from min to 1.0uA. The Emitter cut-off current is from min to 1.0uA. The difference of Base- Emitter Voltage is from min to 30mV.
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