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Vendor:Other Category:Other
The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications.
Vendor:Other Category:Other
The 2SC2712-GR is a product of The 2SC2712 subseries. The 2SC2712 is an Audio Frequency General Purpose Amplifier Applications .Features of The 2SC2712 are:(1)High voltage and high current: VCEO = 50 V, IC = 150 mA (max)...
Vendor:Other Category:Other
Vendor:Other Category:Other
Features of the 2SC2710 are:(1)high DC current gain:hFE(1)=100 to 320;(2)complementary to 2SA1150.
The absolute maximum ratings of the 2SC2710 can be summarized as:(1):the characteristic is collector-base voltage,the sy...
Vendor:Other Category:Other
The 2SC2706 features:
·With TO-3P(I) package·High power dissipation
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2690A features:
·With TO-126 package·Complement to type 2SA1220/1220A
Vendor:Other Category:Other
The 2SC2690 features:
·With TO-126 package·Complement to type 2SA1220/1220A
Vendor:Other Category:Other
The 2SC2688-AZ-L is designed as the NPN silicon transistor device that can be used in in Color TV chroma output circuits applications. And this device has two points of features:(1)High Electrostatic-Discharge-Resistance...
Vendor:Other Category:Other
The UTC 2SC2688 is designed for use in Color TV chroma output circuits.
Vendor:Other Category:Other
The 2SC2682 features:
·With TO-126 package ·Complement to type 2SA1142
Vendor:Other Category:Other
The 2SC2681 features:
·With TO-3PFa package ·Complement to type 2SA1141 ·High transition frequency
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2670 is one of the 2SC2383 series.It is a transistor ,silicon npn epitaxial type.
Feature of the 2SC2670 is:low noise figure:nf=3.5dB(Max.)(f=1MHz).
The absolute maximum ratings of the 2SC2670 can be summarized ...
Vendor:Other Category:Other
Features of the 2SC2669 are:(1)high power gain:Gpe=30dB(Typ.)(f=10.7MHz);(2)recommended for FM IF,OSC stage and AM CONV,IF stage.
The absolute maximum ratings of the 2SC2669 can be summarized as:(1):the characteristic i...
Vendor:Other Category:Other
Features of the 2SC2668 are:(1)small reverse transfer capacitance:Cre=0.70pF(Typ.);(2)low noise figure:NF=2.5dB(Typ.).
The absolute maximum ratings of the 2SC2668 can be summarized as:(1):the characteristic is collector...
Mfg:5000 Pack:SANKEN Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2660A features:
·With TO-220 package·Complement to type 2SA1133/1133A·High VCEO·Large PC
Vendor:Other Category:Other
The 2SC2660 features:
`With TO-220 package`Complement to type 2SA1133/1133A`High VCEO`Large PC
Vendor:Other Category:Other
The 2SC2658 features:
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 500V (Min)·High Switching Speed
Vendor:Other Category:Other
The 2SC2657 features:
`Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 500V (Min)`High Switching Speed
Vendor:Other Category:Other
The 2SC2656 is designed as the high voltage, high speed switching device that has two points of features:(1)high voltage, high speed switching; (2)high reliability. And this device can be used in wide range of applicatio...
Vendor:Other Category:Other
The 2SC2655-Y is one member of the 2SC2655 family which is designed as the NPN silicon transistor that has some points of features:(1)Low saturation voltage VCE(SAT)= 0.5V (Max.);(2)High speed switching time tstg=1.0s (T...
Vendor:Other Category:Other
The 2SC2655 NPN epitaxial planar type is use for power amplifier and switching. The low saturation voltage of it VCE (sat) is 0.5 V (max) when the Ic is 1A. The high collector power dissipation of it PC is 900 mW. The hi...
Vendor:Other Category:Other
The 2SC2654 features:
·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage:VCE(sat)= 0.3(V)(Max)@IC= 3A·Complement to Type 2SA1129
Vendor:Other Category:Other
The 2SC2653 is designed as silicon PNP triple-diffused planar type with horizontal deflection driver for color TV set.2SC2653 has two features. The first one is it would have high collector emitter voltage. The second on...
Vendor:Other Category:Other
The 2SC2650 features:
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min)·High Switching Speed ·Wide Area of Safe Operation
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
Features of the 2SC2644 are:(1)high gain;(2)low IMD;(3)fT=4GHz(Typ.).
The absolute maximum ratings of the 2SC2644 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 25...
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
The 2SC2640 is designed as NPN silicon epitaxial planar type with VHF band power amplifier applications. 2SC2640 has one features which is about its output power which means Po=2W(min)(f=175MHz,Vcc=12.5V,Pi=4W...
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
The 2SC2638 is designed as NPN silicon epitaxial planar type with VHF band power amplifier applications. 2SC2638 has one features which is about its output power which means Po=6W(min)(f=175MHz,Vcc=12.5V,Pi=0....
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:FUJI Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2625 is designed as the silicon NPN power transistor device that can be used in wide range of applications such as (1)switching regulators; (2)ultrasonic generators; (3)high frequency inverters; (4)general purpose...
Vendor:Other Category:Other
The 2SC2620-QBTR is one member of the 2SC2620 family which is designed as the silicon NPN epitaxial planar device that can be used in VHF amplifier, Local oscillator applications.
The absolute maximum ratings of the 2SC...
Mfg:HITACHI Pack:SOT-23 Vendor:Other Category:Other
Mfg:Hitachi Pack:SOT-23 D/C:2005 Vendor:Other Category:Other
Mfg:HITACHI Pack:SOT-23 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2615 features:
·With TO-247 package ·High voltage,high speed
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-92 D/C:5000 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2608 features:
·With TO-3 package·Complement to type 2SA1117·High power dissipation
Mfg:MIT D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:MIT D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:mitsubishi Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2594 features:
·With TO-126 package·Low saturation voltage
Vendor:Other Category:Other
The 2SC2592 features:
·With TO-220 package·Complement to type 2SA1111/1112·Good linearity of hFE·High VCEO
Vendor:Other Category:Other
The 2SC2591 features:
·With TO-220 package·Complement to type 2SA1111/1112·Good linearity of hFE·High VCEO
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2588 is designed as silicon NPN power transistors with typical application that suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications.2SC2588 has...
Vendor:Other Category:Other
The 2SC2582 features:
·With TO-126 package·Large collector power dissipation·High transition frequency
Vendor:Other Category:Other
The 2SC2581 features:
·With TO-3PN package·Complement to type 2SA1106·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC2580 features:
·With TO-3PN package·Complement to type 2SA1105·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC2579 features:
·With TO-3PN package·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC2578 features:
·With TO-3PN package·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC2577 features:
`With TO-3PN package`Complement to type 2SA1102`High power dissipation`High current capability
Vendor:Other Category:Other
The 2SC2570A features:
·Low Noise and High Gain NF = 1.5 dB TYP.Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA·Wide Dynamic Range NF = 1.9 dB TYP.Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA
Vendor:Other Category:Other
Mfg:NEC Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2562 features:
·With TO-220 package·Complement to type 2SA1012·Low saturation voltage·High speed switching time
Vendor:Other Category:Other
The 2SC2556A features:
·With TO-126 package ·High VCBO ·Low collector saturation voltage ·High transition frequency
Vendor:Other Category:Other
The 2SC2556 features:
·With TO-126 package ·High VCBO ·Low collector saturation voltage ·High transition frequency
Vendor:Other Category:Other
The 2SC2555 features:
`With TO-3P(I) package`High collector breakdown voltageVCEO=400V(Min)`Excellent switching times: tr=1.0s(Max.) tf=1.0s(Max.)@ IC=4A
Vendor:Other Category:Other
The 2SC2553 features:
`With TO-220C package`High collector breakdown voltage: VCEO=400V(Min)`Excellent switching time: tr=1.0s(Max.): tf =1.0s(Max.@IC=4A
Vendor:Other Category:Other
The 2SC2552 features:
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·Fast Switching Speed
Mfg:TOSHIBA Pack:TO-92 D/C:97+ Vendor:Other Category:Other
The 2SC2551 is designed as silicon NPN epitaxial type (PCT process) whose typical applications contains hight voltage control applications,plasma display, nixie tube driver applications and cathode ray tube brightn...
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2542 features:
`With TO-220C package`High voltage ,high speed switching`High reliability
Vendor:Other Category:Other
The 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.
The 2SC2540 has 4 features.The first one is high power gain:Gpe 8.2dB @ Vcc=13.5V,Po=...
Vendor:Other Category:Other
The 2SC2535 features:
`With TO-220C package`High collector breakdown voltage: VCEO=400V(Min)`Excellent switching time: tr=1.0s(Max.): tf =1.0s(Max.
Vendor:Other Category:Other
The 2SC2534 features:
`With TO-220C package`High collector breakdown voltage: VCEO=400V(Min)`Excellent switching time: tr=1.0s(Max.): tf=1.0s(Max.
Vendor:Other Category:Other
The 2SC2532 is one of the 2SC2383 series.It is a transistor ,silicon npn epitaxial type.
Feature of the 2SC2532 is:high hFE:hFE(1)=5000(Min.)(IC=10mA);hFE(2)=10000(Min.)(IC=100mA).
The absolute maximum ratings of the 2...
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2523 features:
·With TO-3 package·Complement to type 2SA1073·Wide area of safe operation
Vendor:Other Category:Other
The 2SC2517 features:
·With TO-220C package·Low collector saturation voltage·Wide area of safe operation
Vendor:Other Category:Other
The 2SC2516 features:
·With TO-220C package·Low collector saturation voltage·Wide area of safe operation
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:TOSHIBA D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Features of the 2SC2510 are:(1)specified 28V,28MHz,characteristics;(2)output power:Po=150WPEP(Min.);(3)power gain:Gp=12.2dB(Min.);(4)collector efficiency:C=35%(Min.);(5)intermodulation distortion:IMD=-30dB(Max.).
The ab...
Vendor:Other Category:Other
The 2SC2509 is designd as silicon NPN exitaxial planar type for 2 to 30 MHz linear power amplifier applications (low supply voltage use). 2SC2509's features is that it would be specified 12.5V, 28MHz character...
Vendor:Other Category:Other
The 2SC2502 features:
·With TO-220C package·High breakdown voltage·High speed switching time
Vendor:Other Category:Other
The 2SC2500 is designed as one kind of silicon NPN epitaxial type (PCT process) that can be used in strobe flash applications and medium power amplifier applications. Features of this device are: (1)high DC current gain ...
Vendor:Other Category:Other
The absolute maximum ratings of the 2SC2498 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 30,the unit is V;(2):the characteristic is collector-emitter voltage,the ...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC2489 features:
·Good Linearity of hFE·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 150V (Min)·Wide Area of Safe Operation·Complement to Type 2SA1065
Vendor:Other Category:Other
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