2SC2638

Features: SpecificationsDescription The 2SC2638 is designed as NPN silicon epitaxial planar type with VHF band power amplifier applications. 2SC2638has one features which is about its output power which means Po=6W(min)(f=175MHz,Vcc=12.5V,Pi=0.5W). Some absolute maximum ratings of 2SC2638(Tc=25°C ...

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SeekIC No. : 004221985 Detail

2SC2638: Features: SpecificationsDescription The 2SC2638 is designed as NPN silicon epitaxial planar type with VHF band power amplifier applications. 2SC2638has one features which is about its output power w...

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Part Number:
2SC2638
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/12/21

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Product Details

Description



Features:






Specifications






Description

      The 2SC2638 is designed as NPN silicon epitaxial planar type with VHF band power amplifier applications.
      2SC2638 has one features which is about its output power which means Po=6W(min)(f=175MHz,Vcc=12.5V,Pi=0.5W).
      Some absolute maximum ratings of 2SC2638(Tc=25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its collector to base voltage which would be 35V.The second one is about its emitter to base voltage which would be 3.5V.The third one is about its collector to emitter voltage which would be 17V.The fourth one is about its collector current which would be 2A.The fifth one is about its collector power dissipation which would be 15 W.The sixth one is about its junction temperature which would be which would be +175°C maximum.The eighth one is about its storage temperature which would be -65 to +175°C.
      Also some important electrical characteristics(Ta=25°C unless otherwise specified) about 2SC2638.The first one is about its collector cutoff current which would be 0.1(max) mA with condition of Vcb=15V,Ie=0.The second one is about its collector-base breakdown voltage which would be 35(min) V with condition of Ic=1mA,Ie=0.The third one is about its collector-emitter breakdown voltage which would be 17(min) V with condition of Ic=10mA,Ib=0.The fourth one is about its emitter-base breakdown voltage which would be 3.5(min) V with condition of Ie=1mA,Ic=0.The fifth one is about its DC current gain which would be 10(min) with condition of Vce=5V,Ic=1A.The sixth one is about its collector output capacitance which would be 25(max) pF with condition of Vcb=10V,Ie=0,f=1MHz.The seventh one is about its output power which would be 6(min) and 7(typ) W with condition of Vcc=12.5V, f=175MHz, Pi=0.5W.The eighth one is about its power gain which would be 10.8(min) and 11.5(typ) dB with condition of Vcc=12.5V, f=175MHz, Pi=0.5W.The ninth one is about its collector efficiency which would be 60%(min) and 72%(typ) with condition of Vcc=12.5V, f=175MHz, Pi=0.5W.And so on.For more information please contact us.






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