2SC2509

      The 2SC2509 is designd as silicon NPN exitaxial planar type for 2 to 30 MHz linear power amplifier applications (low supply voltage use).
      2SC2509's features is that it would be specified 12.5V, 28MHz characteristics which means its output power would be 10W, its minimum gain would be 14dB, its efficiency would be 25% (min) and its intermodulation distortion would be max -30dB.
      some absolute maximum ratings have been concluded into several points as follow. The first one is about its collector to base voltage which would be 40V. The next one is about its collector to emitter voltage which would be 40V. The next one is about its collector to emitter cutoff voltage which would be 18V. The next one is about its emitter to base voltage which would be 4V. The next one is about its collector current which would be 5A. The next one is about its collector power dissipation which would be 20W. The next one is about its junction temperature which would be 150°C. The next one is about its storage temperature range which would e form -55°C to 150°C.
      Also there are some electrical characteristics about 2SC2509. The first one is about its collector to emitter breakdown voltage which would be min 18V. The next one is about its emitter to base breakdown voltage which would be min 4V. The next one is about its DC current gain which would be min 20 with condition of Vce=5V and Ic=1A. The next one is about its transition frequency which would be typ 200MHz. The next one is about its collector output capacitance which would be max 150pF. The next one is about its power gain which would be min 14.0dB. The next one is about its input power which would be max 0.4W. The next one is about its collector efficiency which would be min 35%. The next one is about its intermodulation distortion which would be max -30dB. And so on. For more information please contact us.