2SC2655

DescriptionThe 2SC2655 NPN epitaxial planar type is use for power amplifier and switching. The low saturation voltage of it VCE (sat) is 0.5 V (max) when the Ic is 1A. The high collector power dissipation of it PC is 900 mW. The high-speed switching of it tstg is 1.0 s (typ.). And it is complement...

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SeekIC No. : 004221992 Detail

2SC2655: DescriptionThe 2SC2655 NPN epitaxial planar type is use for power amplifier and switching. The low saturation voltage of it VCE (sat) is 0.5 V (max) when the Ic is 1A. The high collector power dissi...

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Part Number:
2SC2655
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The 2SC2655 NPN epitaxial planar type is use for power amplifier and switching. The low saturation voltage of it VCE (sat) is 0.5 V (max) when the Ic is 1A. The high collector power dissipation of it PC is 900 mW. The high-speed switching of it tstg is 1.0 s (typ.). And it is complementary to 2SA1020.
There are some absolute maximum ratings for 2SC2655 when it is under the temperature of 25 . The first one is about its collector-base voltage, the symbol of it is V(cbo) and it would would be 50V.The second one is about its collector-emitter voltage, the symbol of it is V(ceo) and it would would be 50V. The third one is about its emitter-base voltage, the symbol of it is V(ebo) and it would would be 5V. The fourth one is about its collector current, the symbol of it is Ic and it would would be 2A. The fifth one is about its base current, the symbol of it is Ib and it would would be 0.5A.The sixth one is about its collector power dissipation, the symbol of it is Pc and it would would be 900mW. The seventh one is about its junction temperature, the symbol of it is Tj and it would would be 150.The eighth one is about its storage temperature range, the symbol of it is T(stg) and it would would be -55 to 150.
There are also some elecrical characteristics for 2SC2655. For its collector cut-off current, the I(cbo) would be 1.0A(max.) when the V(cb) is 50V and the Ie is 0. For its emitter cut-off current, the I(ebo) would be 1.0A(max.) when the V(cb) is 5V and the Ic is 0. For its collector-emitter breakdown voltage, the V(br)ceo would be 50V (min.) when the Ic is 10mA and the Ib is 0. For its collector-emitter saturation voltage, the Vce(sat) would be 0.5V (max.) when the Ic is 1A and the Ib is 0.05A. For its base-emitter saturation voltage, the Vce(sat) would be 1.2V (max.) when the Ic is 1A and the Ib is 0.05A. For transition frequency of 2SC2655, the fT would be 100MHz(typ.)when the V(ce) is 2 V and Ic is 0.5 A. For its collector output capacitance, the C(ob) would be 30pF(typ.) when the V(cb) is 10 V , Ic is 0, and f is 1 MHz. These are the elecrical characteristics for it.








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