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Vendor:Other Category:Other
The 2SB1119 is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)large cur...
Vendor:Other Category:Other
The 2SB1118T-TD is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)low collector-to-emitter sat...
Mfg:SANYO Pack:SOT89 D/C:2004 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1117 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)low collector-to-emitter saturat...
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1116 is designed for use in driver and output stages of AF amplifier,general purpose application.
Features of the 2SB1116 are:(1)low collector saturation voltage,Vce(sat)=-0.20V TYP.(Ic=-0.1A,IB=-50mA); (2)high b...
Vendor:Other Category:Other
The 2SB1115-T1 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)world standard miniature pack...
Mfg:NEC Vendor:Other Category:Other
Mfg:NEC Pack:SOT-89 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1114-T1 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)world standard miniature pack...
Vendor:Other Category:Other
The 2SB1114 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)world standard miniature package;(2)high DC current gain hFE = 135 to 600;(3)low VCE(sat) = -0.3 V at 1.5...
Vendor:Other Category:Other
The 2SB1109 is designed as one kind of PNP / NPN epitaxial planar silicon transistor. The absolute maximum ratings of the 2SB1109 can be summarized as:(1)collctor to base voltage: -160 V;(2)collector to emitter voltage: ...
Vendor:Other Category:Other
The 2SB1108 is designed as one kind of PNP / NPN epitaxial planar silicon transistor. Features of this device are:(1)high DC current gain (hFE);(2)high speed switching;(3)"full pack" package for simplified mounting on a ...
Vendor:Other Category:Other
The 2SB1106 features:
·With TO-220C package·DARLINGTON·High DC durrent gain·Complement to type 2SD1606
Vendor:Other Category:Other
The 2SB1105 features:
·With TO-220C package·DARLINGTON·High DC durrent gain·Complement to type 2SD1605
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1101S is designed as one kind of low frequency power amplifier. The absolute maximum ratings of the 2SB1101S can be summarized as:(1)collctor to base voltage: -60 V;(2)collector to emitter voltage: -60 V;(3)emitte...
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1098 features:
·With TO-220F package ·Complement to type 2SD1589 ·DARLINGTON ·High DC current gain
Mfg:TOSHIBA Pack:TO-220Fa D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1096S is one member of the 2SB1096 family which is designed as one kind of silicon PNP power transistors. This device can be used in TV vertical output applications
The absolute maximum ratings of the 2SB1096S ca...
Vendor:Other Category:Other
The 2SB1096 features:
·With TO-220Fa package ·High breakdown voltage ·Complement to type 2SD1587
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1093 is designed as one kind of PNP silicon darlington transistor which includes a dumper diode at C-E. This device is suitable for general driving use, such as hammer, solenoid, lamp or motor.
Features of the 2S...
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1087 features:
·With TO-220C package·High DC current gain·DARLINGTON
Vendor:Other Category:Other
The 2SB1086A features:
·With TO-126 package·Complement to type 2SD1563A·Low collector saturation voltage·Large current capability
Vendor:Other Category:Other
The 2SB1086 features:
·With TO-126 package·Complement to type 2SD1563·Low collector saturation voltage·Large current capability
Vendor:Other Category:Other
The 2SB1085A features:
·With TO-220 package·Complement to type 2SD1562A·Low collector saturation voltage
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1077 is designed as one kind of low frequency power amplifier. The absolute maximum ratings of the 2SB1077 can be summarized as:(1)collctor to base voltage: -60 V;(2)collector to emitter voltage: -60 V;(3)emitter ...
Vendor:Other Category:Other
The 2SB1076M is a low freq.power amp. epitaxial planar PNP silicon darlington transistors.
Features of the 2SB1076M are:(1)dralington connection provides high DCcurrent gain(hFE);(2)bulit-in resisitance of approx.4k acr...
Vendor:Other Category:Other
The 2SB1075 features:
·With TO-126 package ·High collector-peak current ·Low collector saturation voltage
Mfg:PANASONI Pack:SOT-89 D/C:05+ Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1069A features:
·With TO-220 package·High speed switching·Low collector saturation voltage
Vendor:Other Category:Other
The 2SB1069 features:
·With TO-220 package·High speed switching·Low collector saturation voltage
Vendor:Other Category:Other
The 2SB1068 is designed as one kind of PNP silicon transistor that can be used in driver and output stages of audio frequency amplifiers. Features of this device are:(1)low collector saturation voltage: VCE(sat): -0.25 V...
Vendor:Other Category:Other
The 2SB1067S is designed as one kind of PNP silicon transistor that can be used in driver and output stages of audio frequency amplifiers. Features of this device are:(1)low collector saturation voltage: VCE(sat): -1.5 V...
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1066M is designed as one kind of PNP silicon transistor that can be used in driver and output stages of audio frequency amplifiers. Features of this device are:(1)low collector saturation voltage: VCE(sat): -0.5 V...
Vendor:Other Category:Other
The 2SB1065-Q is one member of the 2SB1065 family which is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has four points of featurs:(1)low collector saturation voltage: VCE(sa...
Vendor:Other Category:Other
The 2SB1065 features:
·With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage
Vendor:Other Category:Other
The 2SB1064 features:
·With TO-220 package·Complement to type 2SD1505·Low collector saturation voltage
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
The 2SB1063 features:
·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT
Vendor:Other Category:Other
The 2SB1062 is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has one point of feature:M type package suitable for automatic insertion, easier manual insertion and self-standin...
Vendor:Other Category:Other
The 2SB1061 is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has one point of feature:M type package suitable for automatic insertion, easier manual insertion and self-standin...
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1058 is designed as one kind of silicon PNP epitaxial low frequency power amplifier that is complementary pair with 2SD1489. The absolute maximum ratings of the 2SB1058 can be summarized as:(1)collector to base vo...
Vendor:Other Category:Other
The 2SB1057S is designed as one kind of silicon PNP epitaxial low frequency power amplifier that is complementary pair with 2SD1489. Features of this device are:(1)exceptionally good linearity of hFE;(2)wide area of safe...
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
The 2SB1057 features:
·With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
The 2SB1056 features:
·With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
The 2SB1055 features:
·With TO-3PFa package·Complement to type 2SD1486·High fT·Satisfactory linearity of hFE·Wide area of safe operation
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
The 2SB1052 features:
·With TO-220Fa package·Complement to type 2SD1480·Low collector saturation voltage
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:HITACHI Pack:SOT-89 Vendor:Other Category:Other
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
The 2SB1034 features:
·With TO-126 package·Low collector saturation voltage·High DC current gain·DARLINGTON
Mfg:ROHM Pack:TO-220 Vendor:Other Category:Other
Mfg:SANKEN Pack:TO-3P Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Panasonic - SSG (VA) Category:Discrete Semiconductor Products
TRANS PNP AF AMP 50V 500MA NEW S
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:HITACHI Pack:SOT-89 Vendor:Other Category:Other
Mfg:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1024 features:
·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -3A·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A)·Complement to Type 2SD1414
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
The 2SB1023 features:
·With TO-220Fa package·High DC current gain·Low saturation voltage·Complement to type 2SD1413
Mfg:TOS D/C:04+ Vendor:Other Category:Other
The 2SB1022 features:
·With TO-220Fa package·High DC current gain·Low saturation voltage·Complement to type 2SD1417
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
The 2SB1021 features:
·With TO-220Fa package·High DC current gain·Low saturation voltage·Complement to type 2SD1416
Mfg:TOS Pack:TO220-3 D/C:01+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1020 features:
·With TO-220Fa package·High DC current gain·Low saturation voltage·Complement to type 2SD1415
Vendor:Other Category:Other
The 2SB1019 features:
·With TO-220Fa package·Low saturation voltage·Complement to type 2SD1412
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1018 features:
·With TO-220F package·High collector current·Low collector saturation voltage·Complement to type 2SD1411
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SB1015 features:
`With TO-220Fa package`Collector power dissipation:PC=25W@TC=25`Low collector saturation voltage`Complement to type 2SD1406
Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Panasonic - SSG Category:Discrete Semiconductor Products
TRANS PNP LF 400VCEO .1A TO-126
Vendor:Other Category:Other
The 2SB1009 features:
·With TO-126 package·Complement to type 2SD1380
Vendor:Other Category:Other
The 2SB1007 features:
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min)·Good Linearity of hFE·Complement to Type 2SD1378
Mfg:5000 Pack:SANKEN Vendor:Other Category:Other
The 2SB1005 features:
·With TO-220C package·High DC Current Gain·DARLINGTON
Mfg:HITACHI Pack:SOT-89 Vendor:Other Category:Other
Mfg:HITACHI Pack:SOT-89 Vendor:Other Category:Other
© 2008-2012 SeekIC.com Corp.All Rights Reserved.