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DescriptionThe 2SB1076M is a low freq.power amp. epitaxial planar PNP silicon darlington transistors. Features of the 2SB1076M are:(1)dralington connection provides high DCcurrent gain(hFE);(2)bulit-in resisitance of approx.4k across base and emitter.Excellent temperature stability. The absolute...

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SeekIC No. : 004220783 Detail

2SB1076M: DescriptionThe 2SB1076M is a low freq.power amp. epitaxial planar PNP silicon darlington transistors. Features of the 2SB1076M are:(1)dralington connection provides high DCcurrent gain(hFE);(2)buli...

2SB1076M Data Sheet

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Part Number:: 2SB1076M
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Description

The 2SB1076M is a low freq.power amp. epitaxial planar PNP silicon darlington transistors.

Features of the 2SB1076M are:(1)dralington connection provides high DCcurrent gain(hFE);(2)bulit-in resisitance of approx.4k across base and emitter.Excellent temperature stability.

The absolute maximum ratings of the 2SB1076M can be summarized as:(1)collector to base Voltage,V_CBO:-40V;(2)Collector to emitter voltage,V_CER:-40V(R_BE=10K);(3)Base to emitter voltage between,V_EBO:-5V;(4)Collector current,I_C:-2A;(5)Collector dissipation,P_C:1W*;(6)junction temperature,T_j:150;(7)Storage temperature range,T_stg:-55 to 150.

If you want to know more information such as the electrical characteristics about the 2SB1076M, please download the datasheet in www.seekic.com or www.chinaicmart.com .

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2SB1076M

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