2SB1118T-TD

The 2SB1118T-TD is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)low collector-to-emitter saturation voltage;(2)very small size making it easy to provide high-density, small-sized hybrid IC's.

The absolute maximum ratings of the 2SB1118T-TD can be summarized as:(1)collctor to base voltage: 20 V;(2)collector to emitter voltage: 15 V;(3)emitter to base voltage: 5 V;(4)collector current: 0.7 A;(5)collector current (pulse): 1.5 A;(6)collector dissipation: 500 mW;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

And the electrical characteristics of the 2SB1118T-TD can be summarized as:(1)collector cutoff current: 0.1 uA;(2)emitter cutoff current: 0.1 uA;(3)DC current gain: 140 to 560;(4)gain bandwidth product: 250 MHz;(5)C-E saturation voltage: 10 to 25 mV;(6)B-E saturation voltage: 0.8 to 1.2 V. If you want to know more information such as the electrical characteristics about the 2SB1118T-TD, please download the datasheet in www.seekic.com or www.chinaicmart.com .