2SB1114

The 2SB1114 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)world standard miniature package;(2)high DC current gain hFE = 135 to 600;(3)low VCE(sat) = -0.3 V at 1.5 A;(4)complement to 2SD1614. Also this device is designed for audio frequency power amplifier and switching application, especially in hybrid integrated circuits.

The absolute maximum ratings of the 2SB1114 can be summarized as:(1)collector-base voltage: -20 V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -2 A;(5)collector power dissipation: 2.0 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -25 V;(2)collector-emitter breakdown voltage: -25 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.1 uA;(5)emitter cutoff current: -0.1 uA;(6)collector-emitter saturation voltage: -0.65 to -0.75 V;(7)DC current transfer ratio: 100 to 560;(8)transition frequency: 180 MHz;(9)output capacitance: 60 pF. If you want to know more information such as the electrical characteristics about the 2SB1114, please download the datasheet in www.seekic.com or www.chinaicmart.com.