2SB1067S

The 2SB1067S is designed as one kind of PNP silicon transistor that can be used in driver and output stages of audio frequency amplifiers. Features of this device are:(1)low collector saturation voltage: VCE(sat): -1.5 V typ. (Ic= -1.0 A, IB= -1 mA);(2)high DC current gain: hFE: 2000 typ. (VCE= -2.0 V, Ic= -1 A);(3)high total power dissipation PT: 0.75 W (Ta=25 );(4)complementary to the NEC 2SD1513 NPN transistor.

The absolute maximum ratings of the 2SB1067S can be summarized as:(1)collector to base voltage: -80 V;(2)collector to emitter voltage: -80 V;(3)power dissipation (Tc=25 ): 10 W;(4)power dissipation (Ta=25 ): 1.5 W;(5)channel temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)emitter to base voltage: -8.0 V;(8)collector current: -2.0 A.

And the electrical characteristics of the 2SB1067S can be summarized as:(1)DC current gain: 2000;(2)output capacitance: 30 pF;(3)collector cutoff current: -10 uA;(4)emitter cutoff current: -4 mA;(5)base to emitter voltage: -2.0 V. If you want to know more information such as the electrical characteristics about the 2SB1067S, please download the datasheet in www.seekic.com or www.chinaicmart.com .