Application·Designed for low frequency power amplifier applications.Specifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuo...
2SB1007: Application·Designed for low frequency power amplifier applications.Specifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitte...
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SYMBOL |
PARAMETER |
VALUE |
UNIT |
VCBO |
Collector-Base Voltage |
-80 |
V |
VCEO |
Collector-Emitter Voltage |
-80 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Collector Current-Continuous |
-0.7 |
A |
PC |
Collector Power Dissipation @ TC=25 Collector Power Dissipation @ Ta=25 |
10 1 |
W |
TJ |
Junction Temperature |
150 |
|
Tstg |
Storage Temperature Range |
-55~150 |
The 2SB1007 features:
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Complement to Type 2SD1378