2SB1114-T1

The 2SB1114-T1 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in low-voltage, high-current amp, muting applications. Features of this device are:(1)world standard miniature package;(2)low VCE(sat). VCE(sat) = -0.3 V at 1.5 A;(3)complement to 2SD1614;(4)high DC current gain hFE = 135 to 600.

The absolute maximum ratings of the 2SB1114-T1 can be summarized as:(1)collctor to base voltage: -20 V;(2)collector to emitter voltage: -20 V;(3)emitter to base voltage: -6.0 V;(4)collector current: -2.0 A;(5)collector current (pulse): -3 A;(6)collector dissipation: 2.0 W;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

And the electrical characteristics of the 2SB1114-T1 can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter cutoff current: -100 nA;(3)DC current gain: 135 to 600;(4)gain bandwidth product: 180 MHz;(5)C-E saturation voltage: -0.3 to -0.5 V;(6)B-E saturation voltage: -0.65 to -0.75 V. If you want to know more information such as the electrical characteristics about the 2SB1114-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com .