2SB1011

TRANS PNP LF 400VCEO .1A TO-126

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SeekIC No. : 003436208 Detail

2SB1011: TRANS PNP LF 400VCEO .1A TO-126

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US $ .17~.46 / Piece | Get Latest Price
Part Number:
2SB1011
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $.46
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  • $.27
  • $.23
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  • $.17
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/12

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
Transistor Type: PNP Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 400V Resistor - Base (R1) (Ohms): -
Capacitance : 4 pF Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): - Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 5V Power - Max: 1.2W
Frequency - Transition: 70MHz Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1    

Description

Series: -
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Mounting Type: Through Hole
Frequency - Transition: 70MHz
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Power - Max: 1.2W
Voltage - Collector Emitter Breakdown (Max): 400V
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 5V
Supplier Device Package: TO-126B-A1


Features:

• High collector-base voltage (Emitter open) VCBO
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)



Specifications

Parameter
Ratings
Symbol
Conditions
Unit
Collector to base voltage
−400
VCBO
V
Collector to emitter
voltage
-400
VCEO
V
Emitter to base voltage
−5
VEBO
V
Collector current
−100
I D(DC)
A
Collector current
−200
I C(pulse)
A
Base current
−3.5
I B(DC)
A
Total power dissipation
35
PT
W
Total power dissipation
1.2
PT
W
Junction temperature
150
TL
°C
Storage temperature
−55 to+150
Tstg
-
°C



Parameters:

Technical/Catalog Information2SB1011
VendorPanasonic - SSG
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)100mA
Power - Max1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 5V
Vce Saturation (Max) @ Ib, Ic2.5V @ 5mA, 50mA
Frequency - Transition70MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126B-A1
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SB1011
2SB1011



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