2SB1058

The 2SB1058 is designed as one kind of silicon PNP epitaxial low frequency power amplifier that is complementary pair with 2SD1489. The absolute maximum ratings of the 2SB1058 can be summarized as:(1)collector to base voltage: -20 V;(2)collector to emitter voltage: 16 V;(3)emitter to base voltage: -6 V;(4)collector current: -2 A;(5)collector power dissipation: 0.75 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SB1058 can be summarized as:(1)collector to base breakdown voltage: -20 V;(2)collector to emitter breakdown voltage: -16 V;(3)emitter to base breakdown voltage: -6 V;(4)collector cutoff current: -2 uA;(5)emitter cutoff current: -0.2 uA;(6)DC current transfer ratio: 100 to 320;(7)collector to emitter saturation voltage: -0.3 V;(8)gain bandwidth product: 80 MHz;(9)collector output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about the 2SB1058, please download the datasheet in www.seekic.com or www.chinaicmart.com.