2SB1057S

The 2SB1057S is designed as one kind of silicon PNP epitaxial low frequency power amplifier that is complementary pair with 2SD1489. Features of this device are:(1)exceptionally good linearity of hFE;(2)wide area of safe operation (ASO);(3)"full pack" package for simplified mounting only by a screw, requires no insulator. The absolute maximum ratings of the 2SB1057S can be summarized as:(1)collector to base voltage: 150 V;(2)collector to emitter voltage: 150 V;(3)emitter to base voltage: 5 V;(4)collector current: 9 A;(5)collector power dissipation: 100 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SB1057S can be summarized as:(1)collector to base breakdown voltage: -20 V;(2)collector to emitter breakdown voltage: -16 V;(3)emitter to base breakdown voltage: -6 V;(4)collector cutoff current: -2 uA;(5)emitter cutoff current: -0.2 uA;(6)DC current transfer ratio: 100 to 320;(7)collector to emitter saturation voltage: -0.3 V;(8)gain bandwidth product: 80 MHz;(9)collector output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about the 2SB1057S, please download the datasheet in www.seekic.com or www.chinaicmart.com.