2SB1116

The 2SB1116 is designed for use in driver and output stages of AF amplifier,general purpose application.

Features of the 2SB1116 are:(1)low collector saturation voltage,Vce(sat)=-0.20V TYP.(Ic=-0.1A,IB=-50mA); (2)high break down voltage,VCEO=-50V; (3)high total power dissipation.:Pt=0.75W(Ta=25); (4)complementary to the NEC 2SD1616/2SD1616A NPN transistor.

The absolute maximum ratings of the 2SB1116 can be summarized as:(1)storage temperature:-55~150; (2)junction temperature:150 maximum; (3)toltal power dissipation(Ta=25):0.75W; (4)VCBO,collector to base voltage:-60V/-80V; (5)Vceo,collector to emitter voltage:-50V/-60V; (6)Ic,collector current(DC):-1.0A; (7)Ic,collector current(pulse)*:-2.0A.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .