2SB1061

The 2SB1061 is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has one point of feature:M type package suitable for automatic insertion, easier manual insertion and self-standing on PC board.

The absolute maximum ratings of the 2SB1061 can be summarized as:(1)VCBO: -300 V;(2)VCEO: -300 V;(3)VEBO: -7 V;(4)Ic: -0.3 A;(5)Pc: 1.5 W;(6)Tj: 150 ;(7)Tstg: -55 to +150 . And the electrical characteristics of the 2SB1061 can be summarized as:(1)ICBO: -300 nA;(2)VCBO: -300 V;(3)VCEO: -10 V;(4)VEBO: -7 V;(5)hFE1: 100 to 350;(6)hFE2: 60;(7)VCE(sat): -0.16 to -0.2 V;(8)VBE(sat): -0.8 to -1.0 V;(9)fT= 130 MHz;(10)Cob: 22 pF. If you want to know more information such as the electrical characteristics about the 2SB1061, please download the datasheet in www.seekic.com or www.chinaicmart.com.