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Vendor:Other Category:Other
The 2SA877 features:
`High Power Dissipation-: PC= 100W(Max.)@TC=25`Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min.)
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:5000 Pack:ROHM Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA839 features:
·With TO-220 package Fig.1 simplified outline (TO-220) and symbol·Complement to type 2SC1669·High breakdown voltage
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA837 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC1667
Vendor:Other Category:Other
Vendor:Other Category:Other
Features of the 2SA830S are:(1)darlington connection for high DC current gain;(2)built-in 4 k resistor between base and emitter;(3)complements the 2SD1383k/2SD1645S.
The absolute maximum ratings of the 2SA830S can be su...
Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA815 features:
·With TO-220 package·Complement to type 2SC1624/1625·High breakdown voltage
Vendor:Other Category:Other
The 2SA814 features:
·With TO-220 package·Complement to type 2SC1624/1625·High breakdown voltage
Vendor:Other Category:Other
The 2SA812-T1B-A is a PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD.
The feature of the 2SA812-T1B-A are:(1)Complementary to 2SC1623 ; (2)High DC Current Gain: hFE = 200 TYP. (VCE = ?6.0 V, IC = -1.0 mA) ) ; (3)High V...
Vendor:Other Category:Other
The 2SA812-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)Hig...
Vendor:Other Category:Other
The 2SA812-M6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)Complementary to 2SC1623;(2)High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) );(3)Hig...
Vendor:Other Category:Other
The 2SA812A-T1B-AM7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Packa...
Vendor:Other Category:Other
The 2SA812A-T1B-AM6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Packa...
Vendor:Other Category:Other
The 2SA812A-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is...
Vendor:Other Category:Other
The 2SA812A-M6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is...
Vendor:Other Category:Other
The 2SA812A/B is designed as one kind of silicon epitaxial planar transistor device that has three points of features:(1)Commplementary to 2SC1623;(2)High DC current gain:hFE = 200 typ. (VCE = -6.0V,IC = -1.0mA);(3)High ...
Vendor:Other Category:Other
The 2SA812-M7 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is ...
Vendor:Other Category:Other
The 2SA812-M6 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is ...
Mfg:NEC Pack:SOP D/C:07+ Vendor:Other Category:Other
The 2SA812 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is avai...
Mfg:NEC Pack:SOT-23 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA808 features:
`High Power Dissipation- : PC= 50W(Max.)@TC=25`Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.)
Vendor:Other Category:Other
The 2SA807 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC1618
Vendor:Other Category:Other
The 2SA795A is designed as one kind of PNP silicon transistor that can be used in driver stages of audio frequency amplifiers. Features of the 2SA795A are:(1)high total power dissipation and high breakdown voltage: 1.0 W...
Vendor:Other Category:Other
The 2SA795 features:
`Large Collector Power Dissipation`High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min)`Good Linearity of hFE`Complement to Type 2SC1565
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA775 features:
·With TO-220 package Fig.1 simplified outline (TO-220) and symbol·High breakdown voltage
Vendor:Other Category:Other
The 2SA771 features:
·With TO-220 package·Complement to type 2SC1985/1986·Low collector saturation voltage
Vendor:Other Category:Other
The 2SA770 features:
·With TO-220 package·Complement to type 2SC1985/1986·Low collector saturation voltage
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA768 features:
·With TO-220 package·Complement to type 2SC1826
Vendor:Other Category:Other
The 2SA766 features:
`With TO-66 package`High power dissipation`Complement to type 2SC1450
Vendor:Other Category:Other
The 2SA765 features:
·With TO-66 package·Low collector saturation voltage
Vendor:Other Category:Other
The 2SA764 features:
`With TO-66 package`Low collector saturation voltage`Complement to type 2SC1444
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA757 features:
`With TO-3 package`Complement to type 2SC897
Vendor:Other Category:Other
The 2SA756 features:
·With TO-3 package·Complement to type 2SC1030
Vendor:Other Category:Other
The 2SA756 features:
·With TO-220 package Fig.1 simplified outline (TO-220) and symbol·Complement to type 2SC1419·Note:Type 2SA754 with short pin
Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA753 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC1343
Vendor:Other Category:Other
The 2SA748 features:
·With TO-220 package·Complement to type 2SC1398·Large collector power dissipation
Vendor:Other Category:Other
The 2SA747A features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC1116A
Vendor:Other Category:Other
The 2SA747 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC1116
Vendor:Other Category:Other
The 2SA746 features:
`High Power Dissipation- : PC= 100W(Max.)@TC=25`Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.)`Complement to Type 2SC1115
Vendor:Other Category:Other
The 2SA745A features:
`High Power Dissipation- : PC= 70W(Max.)@TC=25`Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.)`Complement to Type 2SC1403A
Vendor:Other Category:Other
The 2SA745 features:
`High Power Dissipation- : PC= 70W(Max.)@TC=25`Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)`Complement to Type 2SC1403
Vendor:Other Category:Other
The 2SA744 features:
`High Power Dissipation- : PC= 70W(Max.)@TC=25`Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.)`Complement to Type 2SC1402
Vendor:Other Category:Other
Vendor:Other Category:Other
Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-126 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA720A is a kind of silicon PNP epitaxial planar type. It is used for low-frequency driver amplification and is a complementary to 2SC1318A. It has some features as follows. (1) high collector to emitter voltage; (2...
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA714 features:
·With TO-3 package·Wide area of safe operation
Vendor:Other Category:Other
The 2SA699A features:
`With TO-202 package`Complement to type 2SC1226/1226A
Vendor:Other Category:Other
The 2SA699 features:
·With TO-202 package·Complement to type 2SC1226/1226A
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA680 features:
·With TO-3 package·Complement to type 2SC1079/1080·High power dissipation
Vendor:Other Category:Other
The 2SA679 features:
·With TO-3 package·Complement to type 2SC1079/1080·High power dissipation
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
The 2SA675 is a resin sealed mold transistor and is ideal for dynamic drivers of counting indicator pannel such as fluorescent indicator pannel due to high voltage.• High voltage VCBO > −80 V, VCER > ...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA671 features:
·Low Collector Saturation Voltage-: VCE(SUS)= -1.0V(Max)@ IC= -2.0A·DC Current Gain: hFE= 35-320@ IC= -0.5A·Complement to Type 2SC1061
Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA663 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC793
Mfg:TOSHIBA Pack:TO-3 D/C:1000 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA657 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC520
Vendor:Other Category:Other
The 2SA656 features:
·With TO-3 package·Wide area of safe operation·Complement to type 2SC519
Vendor:Other Category:Other
The 2SA653 features:
·With TO-66 package·High voltage: VCEO=-120V(min)
Vendor:Other Category:Other
The 2SA650 features:
·With TO-3 package·Wide area of safe operation
Vendor:Other Category:Other
The 2SA649 features:
·With TO-3 package·Wide area of safe operation
Vendor:Other Category:Other
The 2SA648 features:
·With TO-3 package·Wide area of safe operation
Vendor:Other Category:Other
The 2SA636A features:
·With TO-202 package·Complement to type 2SC1098/1098A·High breakdown voltage·High transition frequency
Vendor:Other Category:Other
The 2SA636 features:
·With TO-202 package·Complement to type 2SC1098/1098A·High breakdown voltage·High transition frequency
Mfg:NEC Pack:TO202 D/C:01+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SA633 features:
`With TO-202 package `High current capability
Vendor:Other Category:Other
The 2SA627 features:
·With TO-3 package·Wide area of safe operation·Large current capability
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