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Mfg:HIT Pack:TO-220 D/C:05+/06+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1880 features:
·With TO-220C package·DARLINGTON·High DC current gain
Vendor:Other Category:Other
The 2SC1875 features:
·With TO-3 package·High voltage ,high speed
Vendor:Other Category:Other
The 2SC1871A features:
·With TO-3 package·High switching speed
Vendor:Other Category:Other
The 2SC1870 features:
·With TO-3 package·High switching speed
Vendor:Other Category:Other
The 2SC1868 features:
·With TO-3 package·Wide area of safe operation·High voltage ,high speed
Vendor:Other Category:Other
The 2SC1863 features:
`With TO-66 package`Continuous collector current-IC=7A`Power dissipation PC=40W @TC=25
Vendor:Other Category:Other
The 2SC1850 is designed as one kind of silicon NPN epitaxial planar type (PCT process) that can be used in high frequency amplifier and FM, RF, MIX, IF amplifier applications. And the two points of features of this devic...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1828 features:
`With TO-66 package`Continuous collector current-IC=1A`Power dissipation PC=40W @TC=25
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1826 features:
`With TO-220 package`Collector current :IC=4A`Collector power dissipation :PC=30W@TC=25
Vendor:Other Category:Other
The 2SC1819M features:
·With TO-220 package·High VCEO·Large PC
Mfg:TOS Pack:TO-92 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:TOS Pack:TO-92 D/C:07+ Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-92 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1815HF is designed as one kind of NPN transistor that has only one feature: power dissipation. The absolute maximum ratings of this device can be summarized as:(1)Collector to Base Voltage: 60 V;(2)Collector to Em...
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1809 is designed as one kind of silicon NPN epitaxial planar silicon transistor (PCT process) that can be used in high frequency amplifier and FM, RF, MIX, IF amplifier applications. And the two points of features...
Vendor:Other Category:Other
The 2SC1785 features:
·With TO-3 package·High power dissipation
Vendor:Other Category:Other
The 2SC1783 features:
·With TO-3 package·High power dissipation·High speed ,high current
Vendor:Other Category:Other
The 2SC1777 features:
·With TO-3 package·Low collector saturation voltage·Excellent safe operating area
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1775 is designed as the silicon NPN epitaxial that can be used in (1)Low frequency amplifier; (2)Complementary pair with 2SA872/A. The absolute maximum ratings of the can be summarized as:(1)collector to base volt...
Vendor:Other Category:Other
The 2SC1756 features:
·With TO-220 package·High breakdown voltage
Vendor:Other Category:Other
The 2SC1755 features:
·With TO-220 package·High breakdown voltage
Mfg:5000 Pack:ROHM Vendor:Other Category:Other
Mfg:5000 Pack:ROHM Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-92 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1723 features:
·With TO-220C package·High breakdown voltage·High transition frequency
Vendor:Other Category:Other
The 2SC1722 features:
·With TO-220C package·High breakdown voltage·High transition frequency
Vendor:Other Category:Other
The 2SC1683 features:
·With TO-220C package·Complement to type 2SA843·High breakdown voltage·Large collector power dissipation
Vendor:Other Category:Other
The 2SC1678 features:
·With TO-220 package·Low collector saturation voltage
Mfg:NEC D/C:9800 Vendor:Other Category:Other
Mfg:nec D/C:n/a Vendor:Other Category:Other
Mfg:nec D/C:n/a Vendor:Other Category:Other
D/C:02+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1672 features:
·With TO-3 package·High current capability·Fast switching speed
Mfg:TOSHIBA Pack:TO-3 D/C:08+ Vendor:Other Category:Other
Mfg:NEC Vendor:Other Category:Other
Mfg:5000 Pack:NEC Vendor:Other Category:Other
Vendor:Other Category:Other
Features of the 2SC1651S are:(1)high breakdown voltage (VCER=210V);(2)complements the 2SA821S.
The absolute maximum ratings of the 2SC1651S can be summarized as:(1):the parameter is collector-base voltage,the symbol is ...
Vendor:Other Category:Other
The 2SC1651C is one member of the 2SC1651 family which is designed as the high-voltage amplifier transistor (-210 V, -30 mA) device that has two points of features:(1)high breakdown voltage, (VCER = -210V ); (2)complemen...
Mfg:5000 Pack:ROHM Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1645 is designed as one kind of high-gain amplifier transistor (-32 V, -0.3 A) taht has three points of features:(1)darlington connection for high DC current gain;(2)built-in 4 k resistor between base and emitter;...
Vendor:Other Category:Other
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1626 features:
·With TO-220C package·Complement to type 2SA816
Vendor:Other Category:Other
The 2SC1625 features:
·With TO-220 package·Complement to type 2SA814/815·High breakdown voltage
Vendor:Other Category:Other
The 2SC1624 features:
·With TO-220 package·Complement to type 2SA814/815·High breakdown voltage
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1623-T1B-A L5 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Mo...
Vendor:Other Category:Other
The 2SC1623T1BL5 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded...
Vendor:Other Category:Other
The 2SC1623-T1B is one member of the 2SC1623 family which is designed as the silicon NPN eptiaxial type that has three points of features:(1)high DC current gain: hFE = 600 max.(VCE= 6.0 V, Ic= 1.0 mA); (2)high voltage: ...
Vendor:Other Category:Other
The 2SC1623RLT1 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded ...
Vendor:Other Category:Other
The 2SC1623QLT1 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded ...
Vendor:Other Category:Other
The 2SC1623-L7 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded P...
Vendor:Other Category:Other
The 2SC1623-L6 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded P...
Vendor:Other Category:Other
The 2SC1623A-T1B-A L7 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: M...
Vendor:Other Category:Other
The 2SC1623A-T1B-A L6 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: M...
Vendor:Other Category:Other
The 2SC1623A-T1B L7 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Mol...
Vendor:Other Category:Other
The 2SC1623A-T1B L6 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Mol...
Vendor:Other Category:Other
The 2SC1623A/B is designed as one kind of NPN silicon epitaxial transistor device that has only two points of features: (1)high DC current gain: hFE=200 typ.(VCE=6.0V, Ic=1.0mA); (2)high voltage: VCEO=50V.
The absolute ...
Vendor:Other Category:Other
The 2SC1623AL6 is one member of the 2SC1623 family which is designed as the silicon epitaxial planar transistor device that has two points of features:(1)High DC current gain:hFE=200TYP (VCE=6.0 V,IC=1.0 mA); (2)High Vol...
Mfg:NEC Pack:06+ D/C:SOT-23 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1623 L7 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded P...
Vendor:Other Category:Other
The 2SC1623 L6 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded P...
Vendor:Other Category:Other
The 2SC1623L6 is one member of the 2SC1623 family which is designed as the silicon epitaxial planar transistor device that has two points of features:(1)High DC current gain:hFE=200TYP (VCE=6.0 V,IC=1.0 mA); (2)High Volt...
Vendor:Other Category:Other
Mfg:NEC Pack:SOT-23 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1619 features:
·With TO-3 package·High current capacity·Wide safe oprating area
Vendor:Other Category:Other
The 2SC1618 features:
·With TO-3 package·High current capacity·Wide safe oprating area
Vendor:Other Category:Other
The 2SC1617 features:
·With TO-3 package·High voltage: VCBO(min):300V·Wide safe oprating area
Vendor:Other Category:Other
The 2SC1610 features:
·With TO-3 package·High current capability·Fast switching speed
Vendor:Other Category:Other
The 2SC1609 features:
·With TO-3 package·High current capability·Fast switching speed
Mfg:5000 Pack:NEC Vendor:Other Category:Other
The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.
Vendor:Other Category:Other
The 2SC1586 features:
·With TO-3 package·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC1585 features:
·With TO-3 package·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC1584 features:
·With TO-3 package·High power dissipation·High current capability
Vendor:Other Category:Other
The 2SC1580 features:
·With TO-3 package·High voltage ,high speed
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1577 features:
·With TO-3 package·High voltage·High speed switching
Vendor:Other Category:Other
The 2SC1576 features:
·With TO-3 package·High voltage,high speed
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:PANASONI Pack:TO92 D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1569 features:
·High Collector-Emitter Breakdown Voltage-:V(BR)CEO= 300V(Min)·DC Current Gain-: hFE= 40-170 @IC= 50mA, VCE= 10V·High Current-Gain Bandwidth Product
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SC1520 features:
·With TO-202 package·High voltage·High transition frequency
Vendor:Other Category:Other
The 2SC1516 features:
·With TO-220 package·Low collector saturation voltage
© 2008-2012 SeekIC.com Corp.All Rights Reserved.