2SC1623 L6

The 2SC1623L6 is one member of the 2SC1623 family which is designed as the silicon epitaxial planar transistor device that has two points of features:(1)High DC current gain:hFE=200TYP (VCE=6.0 V,IC=1.0 mA); (2)High Voltage:VCEO= 50 V. And this device can be used in (1)NPN silicon epitaxial planar transistor; (2)audio frequency general purpose amplifier applications.

The absolute maximum ratings of the 2SC1623L6 can be summarized as:(1)Collector-base voltage: 60 V;(2)Collector-emitter voltage: 50 V;(3)Emitter-base voltage: 5 V;(4)Collector current: 100 mA;(5)Collector power dissipation: 0.20 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: 60 V;(2)Collector-emitter breakdown voltage: 50 V;(3)Emitter-base breakdown voltage: 5 V;(4)Collector cutoff current: 0.1 uA;(5)Emitter cutoff current: 0.1 uA;(6)DC current gain: 90 to 600;(7)Collector-emitter saturation voltage: 0.3 V;(8)Transition frequency: 250 MHz;(9)Collector-emitter saturation voltage: 0.3 V. If you want to know more information such as the electrical characteristics about the 2SC1623L6, please download the datasheet in www.seekic.com or www.chinaicmart.com.