2SC1809

The 2SC1809 is designed as one kind of silicon NPN epitaxial planar silicon transistor (PCT process) that can be used in high frequency amplifier and FM, RF, MIX, IF amplifier applications. And the two points of features of this device are:(1)high transition frequency: fT=500 MHz (typ.) at 1 mA;(2)low output capacitance: Cob=1.4 pF (typ.) at 6 V;(3)low collector-base time constant and high gain;(4)excellent noise response.

The absolute maximum ratings of the 2SC1809 can be summarized as:(1)collector-base voltage: 25 V;(2)collector-emitter voltage: 20 V;(3)emitter-base voltage: 4 V;(4)collector current: 20 mA;(5)collector power dissipation: 150 mW;(6)junction temperature: 125 ;(7)storage tmeperature range: -55 to +125 . If you want to know more information such as the electrical characteristics about the 2SC1809, please download the datasheet in www.seekic.com or www.chinaicmart.com .