DescriptionThe 2SC1623A/B is designed as one kind of NPN silicon epitaxial transistor device that has only two points of features: (1)high DC current gain: hFE=200 typ.(VCE=6.0V, Ic=1.0mA); (2)high voltage: VCEO=50V. The absolute maximum ratings of the 2SC1623A/B can be summarized as:(1)Collector...
2SC1623A/B: DescriptionThe 2SC1623A/B is designed as one kind of NPN silicon epitaxial transistor device that has only two points of features: (1)high DC current gain: hFE=200 typ.(VCE=6.0V, Ic=1.0mA); (2)high ...
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The 2SC1623A/B is designed as one kind of NPN silicon epitaxial transistor device that has only two points of features: (1)high DC current gain: hFE=200 typ.(VCE=6.0V, Ic=1.0mA); (2)high voltage: VCEO=50V.
The absolute maximum ratings of the 2SC1623A/B can be summarized as:(1)Collector-base voltage: 60 V;(2)Collector-emitter voltage: 50 V;(3)Emitter-base voltage: 5.0 V;(4)Collector current: 100 mA;(5)Junction temperature: -55 to +150 ;(6)Storage temperature: -55 to +150 ;(7)Collector Power Dissipation: 200 mW.
The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 0.1 uA;(2)Emitter cutoff current: 0.1 uA;(3)DC current gain: 90 to 600;(4)Collector-emitter saturation voltage: 0.15 to 0.3 V;(5)Base-emitter saturation voltage: 0.86 to 1.0 V;(6)Collector Capacitance: 3.0 pF;(7)Collector to emitter breakdown voltage: 50 V;(8)Transition frequency: 250 MHz. If you want to know more information about the 2SC1623A/B, please download the datasheet in www.seekic.com or www.chinaicmart.com .