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Index 2 : 2SB1203,2SB1202,2SB1119-S(BB/S2N),
2SB1203
Mfg:SANYO Pack:TO-252 D/C:02+ Vendor:Other Category:Other
2SB1202
Vendor:Other Category:Other
2SB1201
Vendor:Other Category:Other
2SB1198K
Vendor:Other Category:Other
The 2SB1198K is designed as one kind of low-frequency transistor device that has some points of features:(1)Low VCE(sat). VCE(sat) = -0.20 V (typ.) (IC / IB = -0.5 A / -50 mA);(2)High breakdown voltage BVCEO = -80 V;(3)C...2SB1197-P
Vendor:Other Category:Other
2SB1197KT146R
Vendor:Rohm Semiconductor Category:Discrete Semiconductor Products
TRANS PNP 32V 0.8A SOT-346The 2SB1197KT146R is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...2SB1197KRLT1G
Vendor:Other Category:Other
The 2SB1197KRLT1G is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...2SB1197KQLT1G
Vendor:Other Category:Other
The 2SB1197KQLT1G is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...2SB1197K T146 R
Vendor:Other Category:Other
The 2SB1197KT146R is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial ...2SB1197K R
Vendor:Other Category:Other
The 2SB1197KR is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial plan...2SB1197K
Vendor:Other Category:Other
2SB1197
Mfg:5000 Pack:ROHM Vendor:Other Category:Other
2SB1194
Vendor:Other Category:Other
The 2SB1194 features: ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD16332SB1193
Vendor:Other Category:Other
2SB1192
Vendor:Other Category:Other
The 2SB1192 features: ·With TO-220Fa package·High VCEO·Large PC·Complement to type 2SD17702SB1190
Vendor:Other Category:Other
The 2SB1190 features: ·With TO-220 package·High VCEO·Large PC·Complement to type 2SD17722SB1189
Vendor:Other Category:Other
The 2SB1189 is designed as one kind of medium power transistor (-80 V, -0.7 A)_device that has some points of features:(1)high breakdown voltage, BVECO= -80 V, and high current, -0.7 A;(2)complements the 2SD1767 / 2SD185...2SB1188 T1000
Vendor:Other Category:Other
The 2SB1188-T1000 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1...2SB1188
Vendor:Other Category:Other
The 2SB1188 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / ...2SB1187
Vendor:Other Category:Other
The 2SB1187 features: ·With TO-220Fa package·Low saturation voltage·Complement to type 2SD1761·Excellent DC current gain characteristics·Wide safe operating area2SB1186A
Vendor:Other Category:Other
The 2SB1186A is one member of the 2SB1186 family which is designed as the silicon PNP power transistor device that has four points of features:(1)With TO-220Fa package; (2)Low collector saturation votlage; (3)Complement ...2SB1186
Vendor:Other Category:Other
The 2SB1186 is designed as one kind of power transistor (-120 V, -1.5 A) that has four points of features:(1)high breakdown voltage (BVCEO= -120 V);(2)low collector output capacitance (typ. 30pF at VCB= -10 V);(3)high tr...2SB1185
Vendor:Other Category:Other
The 2SB1185 features: ·With TO-220Fa package·Low collector saturation votlage·Complement to type 2SD17622SB1184TLR
Vendor:Rohm Semiconductor Category:Discrete Semiconductor Products
TRANS PNP 50V 3A SOT-428The 2SB1184TLR is one member of the 2SB1184 family which is designed as the power transistor that has two points of features:(1)low VCE(sat): VCE(sat) = -0.5V (typ.) (IC/IB = -2A / -0.2A) ; (2)complements the 2SD1760 / 2...2SB1184
Vendor:Other Category:Other
The 2SB1184 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1760 / 2SD1864. ...2SB1183
Mfg:ROHM Pack:TO-252 D/C:09+ Vendor:Other Category:Other
2SB1182TLQ
Vendor:Rohm Semiconductor(VA) Category:Discrete Semiconductor Products
TRANSISTOR PNP 32V 2A SOT-428The 2SB1182TLQ is one member of the 2SB1182 family which is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -...2SB1182 TLQ
Vendor:Other Category:Other
The 2SB1182-TLQ is one member of the 2SB1182 family which is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / ...2SB1182
Vendor:Other Category:Other
The 2SB1182 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1766 / 2SD1758 / ...2SB1181
Mfg:ROHM Pack:TO-252 D/C:09+ Vendor:Other Category:Other
2SB1180A
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1180
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1179A
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1179
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1176
Mfg:PAN Pack:SOT-252 Vendor:Other Category:Other
2SB1175
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1174
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1173
Vendor:Other Category:Other
The 2SB1173 is designed as one kind of AF power amplifier that has three points of features:(1)high DC current gain and good linearity;(2)low collector emitter saturation voltage;(3)"I type" package configuration with a ...2SB1172A
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1172
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1169A
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1169
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1168
Vendor:Other Category:Other
2SB1167T
Vendor:Other Category:Other
The 2SB1167T is one of the 2SB1167 series.The 2SB1167T is a pnp/npn epitaxial planar silicon transistors,100V/3A switching applications.Features of the 2SB1167T are:(1)low collector-to-emitter saturation voltage; (2)high...2SB1167
Vendor:Other Category:Other
2SB1166
Vendor:Other Category:Other
2SB1165
Vendor:Other Category:Other
2SB1163
Vendor:Other Category:Other
The 2SB1163 features: ·With TO-3PL package ·Complement to type 2SD1718 ·Excellent linearity of hFE·Wide area of safe operation (ASO)·High transition frequency fT2SB1162
Vendor:Other Category:Other
·2SB1162 is with TO-3PL package ·Complement to type 2SD1717 ·Excellent linearity of hFE·Wide area of safe operation (ASO)·High transition frequency fT2SB1161
Vendor:Other Category:Other
·2SB1161 is with TO-3PFa package ·Complement to type 2SD1716 ·High fT ·Wide area of safe operation2SB1160
Vendor:Other Category:Other
The 2SB1160 features: ·With TO-3PFa package·Complement to type 2SD1715·High fT·Satisfactory linearity of hFE·Wide area of safe operation2SB1159
Vendor:Other Category:Other
The 2SB1159 features: ·With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation2SB1158
Vendor:Other Category:Other
The 2SB1158 features: ·With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation2SB1157
Vendor:Other Category:Other
The 2SB1157 features: ·With TO-3PFa package ·Complement to type 2SD1712 ·High fT ·Wide area of safe operation2SB1156
Vendor:Other Category:Other
2SB1155
Vendor:Other Category:Other
·2SB1155 is with TO-3PFa package·Complement to type 2SD1706·Low collector saturation voltage·Satisfactory linearity of hFE2SB1154
Vendor:Other Category:Other
2SB1151
Vendor:Other Category:Other
2SB1150
Vendor:Other Category:Other
The 2SB1150 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C.It is suitable for use to operate from IC without predriver,such as hammer driver. Features of the 2SB1150 are:(1)high DC cu...2SB1149L
Vendor:Other Category:Other
The 2SB1149L is one of the 2SB1149 series.The 2SB1149L is a darlington transistor built-in dumper diode at E-C.It is suitable for use to operate from IC without predriver,such as hammer driver. Features of the 2SB1149L ...2SB1149
Vendor:Other Category:Other
·2SB1149 is with TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage2SB1148A
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1148
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SB1145
Vendor:Other Category:Other
The 2SB1145 features: ·With TO-220F package·High DC current gain.·DARLINGTON·Low collector saturation voltage2SB1144S
Vendor:Other Category:Other
The 2SB1144S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 100 V / 1.5 A switching applications. Features of the 2SB1144S are:(1)adoption of FBET and MBIT processes;(2)high ...2SB1144
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
2SB1143S
Vendor:Other Category:Other
The 2SB1143S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 4 A switching applications. Features of the 2SB1144S are:(1)adoption of FBET and MBIT processes;(2)high bre...2SB1143
Vendor:Other Category:Other
2SB1142S
Vendor:Other Category:Other
The 2SB1142S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 2.5 A high speed switching applications. Features of the 2SB1142S are:(1)adoption of FBET and MBIT processe...2SB1142
Vendor:Other Category:Other
2SB1141-T
Vendor:Other Category:Other
The 2SB1141-T is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 18 V / 1.2 A high speed switching applications. Features of the 2SB1141-T are:(1)adoption of FBET and MBIT proces...2SB1141
Mfg:5000 Pack:SANYO Vendor:Other Category:Other
2SB1140
Vendor:Other Category:Other
The 2SB1140 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 18 V / 1.2 A high speed switching applications. Features of the 2SB1140 are:(1)adoption of FBET and MBIT processes;...2SB1136
Vendor:Other Category:Other
2SB1135R
Vendor:Other Category:Other
The 2SB1135R is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 7 A high speed switching applications. Features of the 2SB1135R are:(1)low saturation collector-to-emitter ...2SB1135
Vendor:Other Category:Other
2SB1134R
Vendor:Other Category:Other
The 2SB1134R is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 7 A high speed switching applications. Features of the 2SB1134R are:(1)low saturation collector-to-emitter ...2SB1134
Vendor:Other Category:Other
2SB1133
Vendor:Other Category:Other
2SB1132-x-AB3-R
Vendor:Other Category:Other
The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.2SB1132T100Q
Vendor:Rohm Semiconductor(VA) Category:Discrete Semiconductor Products
TRANSISTOR PNP 32V 1A SO-89The 2SB1182 is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD18...2SB1132 T100 R
Vendor:Other Category:Other
The 2SB1132-T100R is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 /...2SB1132 T100 Q
Vendor:Other Category:Other
The 2SB1132 T100 Q is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 ...2SB1132 R
Vendor:Other Category:Other
The 2SB1132R is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1...2SB1132 Q
Vendor:Other Category:Other
The 2SB1132Q is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1...2SB1132 FD5T100R
Vendor:Other Category:Other
The 2SB1132FD5T100R is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664...2SB1132
Vendor:Other Category:Other
The 2SB1132 is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD18...2SB1131
Vendor:Other Category:Other
The feature of 2SB1131 are as follows: (1)adoption of FBET, MBIT processes; (2)low saturation voltage; (3)large current capacity; (4)fast switching time. The absolute maximum ratings of the 2SB1131 are: (1)collector to ...2SB1127
Vendor:Other Category:Other
The 2SB1127 is a pnp epitaxial planar silicon transistors,20V/5A switching applications. Features of the 2SB1127 are:(1)adoption of FBET,MBIT processes; (2)low saturation voltage; (3)large current capacity ; (4)fast swi...2SB1126
Vendor:Other Category:Other
2SB1125
Vendor:Other Category:Other
Features of the 2SB1125 are:(1)high DC current gain;(2)large current capacity and wide ASO;(3)very small size making it easy to provide high-desity,small-sized hybrid ICs. The absolute maximum ratings of the 2SB1125 can...2SB1124S
Vendor:Other Category:Other
The 2SB1124S is one of the 2SB1124 series.The 2SB1124S is a pnp/npn epitaxial planar silicon transistors,high-current switching applications. Features of the 2SB1124S are:(1)adoption of FBET,MBIT processes; (2)low sat...2SB1124
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
2SB1123
Vendor:Other Category:Other
The 2SB1123 is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)large cur...2SB1122
Vendor:Other Category:Other
2SB1121S-TD-E
Vendor:Other Category:Other
The 2SB1121S-TD-E is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)lar...2SB1121S
Vendor:Other Category:Other
The 2SB1121S is one of the 2SB1121 series.The 2SB1121S is a pnp/npn epitaxial planar silicon transistors,high-current switching applications. Features of the 2SB1121S are:(1)adoption of FBET,MBIT processes; (2)low s...2SB1121
Vendor:Other Category:Other
2SB1120
Vendor:Other Category:Other
2SB1119-S(BB/S2N)
Vendor:Other Category:Other
The 2SB1119-S(BB/S2N) is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in LF amp, electronic governor applications. Features of this device is: very small size making it easy to p...