2SB1167T

The 2SB1167T is one of the 2SB1167 series.The 2SB1167T is a pnp/npn epitaxial planar silicon transistors,100V/3A switching applications.Features of the 2SB1167T are:(1)low collector-to-emitter saturation voltage; (2)high fT; (3)excellent linearity of hFE; (4)fast switching time.

The absolute maximum ratings of the 2SB1167T can be summarized as:(1)collector-to-base voltage:(-)120V; (2)collector-to-emitter voltage:(-)100V; (3)emitter-to-base voltage:(-)6V; (4)collector current(pulse):(-)6A; (5)collector current:(-)3A; (6)collector dissipation:1.2W;20W(Tc=25); (7)junction temperature:150; (8)storage temperature:-55~150.

The electrical characteristics at TA=25°C of the 2SB1167T can be summarized as:(1)collector cutoff current:(-)1A; (2)emitter cutoff current:(-)1A; (3)dc current gain :70~400; (4)gain-bandwidth product:180(130)MHz; (5)outpout capacitance:25(40)pF; (6)C-E saturation voltage:150~400(-200)(-500)mV.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .