Transistors Bipolar (BJT) PNP 32V 1A SO-89
2SB1132T100Q: Transistors Bipolar (BJT) PNP 32V 1A SO-89
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | - 32 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 82 | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 150 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
Packaging : | Reel |
The 2SB1182 is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1858..
The absolute maximum ratings of the 2SB1182 can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -1 or -2 A;(5)collector power dissipation: 1 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 150 MHz;(9)output capacitance: 20 to 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1182, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | 2SB1132T100Q |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 32V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transition | 150MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SC-62, SOT-89, MPT3 (3 leads + Tab) |
Packaging | Digi-Reel? |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SB1132T100Q 2SB1132T100Q 2SB1132T100QDKR ND 2SB1132T100QDKRND 2SB1132T100QDKR |