2SB1189

The 2SB1189 is designed as one kind of medium power transistor (-80 V, -0.7 A)_device that has some points of features:(1)high breakdown voltage, BVECO= -80 V, and high current, -0.7 A;(2)complements the 2SD1767 / 2SD1859 / 2SD1200F.

The absolute maximum ratings of the 2SB1189 can be summarized as:(1)collector-base voltage: -80 V;(2)collector-emitter voltage: -80 V;(3)emitter-base voltage: -5 V;(4)collector current: -0.7 A;(5)collector power dissipation: 0.5 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -80 V;(2)collector-emitter breakdown voltage: -80 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.4 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 100 MHz;(9)output capacitance: 14 to 20 pF. If you want to know more information such as the electrical characteristics about the 2SB1189, please download the datasheet in www.seekic.com or www.chinaicmart.com.