Application·For high power amplifier applications Specifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage...
2SB1159: Application·For high power amplifier applications Specifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V ...
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·For high power amplifier applications
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
VCBO |
Collector-base voltage |
Open emitter |
-140 |
V |
VCEO |
Collector-emitter voltage |
Open base |
-140 |
V |
VEBO |
Emitter-base voltage |
Open collector |
-5 |
V |
IC |
Collector current |
-7 |
A | |
ICP |
Collector current-peak |
-12 |
A | |
PC |
Collector power dissipation |
TC=25 |
80 |
W |
Ta=25 |
3 | |||
Tj |
Junction temperature |
150 |
||
Tstg |
Storage temperature |
-55~150 |
The 2SB1159 features:
·With TO-3PFa package
·Complement to type 2SD1714
·High fT
·Wide area of safe operation