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2SB1132-x-AB3-R

Features: * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)Specifications Parameter Symbol Rating UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current DC IC -1 A Collector curren...

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2SB1132-x-AB3-R: Features: * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)Specifications Parameter Symbol Rating UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO ...

2SB1132-x-AB3-R Data Sheet

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Part Number:
2SB1132-x-AB3-R
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

* Low VCE(SAT).
  VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA)


Specifications

Parameter Symbol Rating UNIT
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -32 V
Emitter-base voltage VEBO -5 V
Collector current DC IC -1 A
Collector current Single pulse, Pw=100ms PULSE -2
Collector power dissipation SOT-89 PC 0.5 W
TO-252 1
Jumction temperature Tj 150
Storage temperature Tstg -55 to +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. 􀀁 􀀁 􀀁 􀀁 􀀁 􀀁
Absolute maximum ratings are stress ratings only and functional device operation is not implied.


Description

The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.


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