Features: Low VCE(sat).V CE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864PinoutSpecifications Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V...
2SB1184: Features: Low VCE(sat).V CE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864PinoutSpecifications Parameter Symbol Limits Unit Collector-base voltage VCBO W...
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Parameter | Symbol | Limits | Unit | |
Collector-base voltage | VCBO | −60 | V | |
Collector-emitter voltage | VCEO | −50 | V | |
Emitter-base voltage | VEBO | −5 | V | |
Collector current |
IC | −3 | A (DC) | |
ICP | −4.5 | A (Pulse) ∗1 | ||
Collector power dissipation |
2SB1184 | PC | 1 | W |
15 | W (TC=25°C) | |||
2SB1243 | 1 | W ∗2 | ||
Junction temperature | Tj | 150 | °C | |
Storage temperature | Tstg | −55~+150 | °C |
The 2SB1184 is designed as one kind of medium power transistor (-32 V, -2 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.5 V (typ.) (IC/IB = -2A / -0.2A);(2)complements the 2SD1760 / 2SD1864.
The absolute maximum ratings of the 2SB1184 can be summarized as:(1)collector-base voltage: -60 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -5 V;(4)collector current: -3 A;(5)collector power dissipation: 1 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -60 V;(2)collector-emitter breakdown voltage: -50 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -1 uA;(5)emitter cutoff current: -1 uA;(6)collector-emitter saturation voltage: -1 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 70 MHz;(9)output capacitance: 50 pF. If you want to know more information such as the electrical characteristics about the 2SB1184, please download the datasheet in www.seekic.com or www.chinaicmart.com.