Application·For high power amplifier applications Specifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collecto...
2SB1163: Application·For high power amplifier applications Specifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO...
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
VCBO |
Collector-base voltage | Open emitter |
-180 |
V |
VCEO |
Collector-emitter voltage | Open base |
-180 |
V |
VEBO |
Emitter-base voltage | Open collector |
-5 |
V |
IC |
Collector current |
-15 |
A | |
ICM |
Collector current-peak |
-25 |
A | |
PC |
Collector power dissipation |
3.5 |
W | |
TC=25 |
150 | |||
Tj |
Junction temperature |
150 |
||
Tstg |
Storage temperature |
-55~150 |
The 2SB1163 features:
·With TO-3PL package
·Complement to type 2SD1718
·Excellent linearity of hFE
·Wide area of safe operation (ASO)
·High transition frequency fT