2SB1197KT146R

Transistors Bipolar (BJT) PNP 32V 0.8A

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SeekIC No. : 00206573 Detail

2SB1197KT146R: Transistors Bipolar (BJT) PNP 32V 0.8A

floor Price/Ceiling Price

US $ .07~.26 / Piece | Get Latest Price
Part Number:
2SB1197KT146R
Mfg:
ROHM Semiconductor
Supply Ability:
5000

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  • Qty
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  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.17
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  • $.07
  • Processing time
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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : - 32 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.8 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single
Maximum Operating Frequency : 200 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-346
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Maximum Operating Frequency : 200 MHz
Maximum DC Collector Current : 0.8 A
DC Collector/Base Gain hfe Min : 120
Collector- Emitter Voltage VCEO Max : - 32 V
Package / Case : SOT-346


Pinout

  Connection Diagram


Description

The 2SB1197KT146R is one member of the 2SB1197 family which is designed as one kind of low-frequency transistor device that has some points of features:(1)High current capacity in compact package Ic = -0.8A;(2)Epitaxial planar type;(3)NPN complement: L2SD1781K;(4)Pb-Free Package is available.

The absolute maximum ratings of the 2SB1197KT146R can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -0.8 A;(5)collector power dissipation: 0.2 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 120 to 390;(8)transition frequency: 200 MHz;(9)output capacitance: 12 to 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1197KT146R, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SB1197KT146R
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)32V
Current - Collector (Ic) (Max)800mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SB1197KT146R
2SB1197KT146R
2SB1197KT146RTR ND
2SB1197KT146RTRND
2SB1197KT146RTR



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